2023
DOI: 10.1002/adfm.202301651
|View full text |Cite
|
Sign up to set email alerts
|

Achieving Ultrahigh Electron Mobility in PdSe2 Field‐Effect Transistors via Semimetal Antimony as Contacts

Abstract: Even though atomically thin 2D semiconductors have shown great potential for next‐generation electronics, the low carrier mobility caused by poor metal–semiconductor contacts and the inherently high density of impurity scatterings remains a critical issue. Herein, high‐mobility field‐effect transistors (FETs) by introducing few‐layer PdSe2 flakes as channels is achieved, via directly depositing semimetal antimony (Sb) as drain–source electrodes. The formation of clean and defect‐free van der Waals (vdW) stacki… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
11
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 14 publications
(12 citation statements)
references
References 56 publications
1
11
0
Order By: Relevance
“…Figure (g) shows the φ SB as a function of the gate voltage V g . The φ SB is estimated to be ∼15 meV, which indicates the ohmic contact between the Cr/Au electrode and Nb 2 Pd 1– x Se 5 nanowires and agrees with the measured linear I ds – V ds features in Figure (c) and (e) . It is clear that the φ SB at the Cr/Au–Nb 2 Pd 1– x Se 5 interface can be modulated efficiently at the low V g regime, and the SBH changes insignificantly at a high V g regime, which is further depicted by the energy band diagram in Figure S6­(b) in the Supporting Information.…”
Section: Resultssupporting
confidence: 83%
See 1 more Smart Citation
“…Figure (g) shows the φ SB as a function of the gate voltage V g . The φ SB is estimated to be ∼15 meV, which indicates the ohmic contact between the Cr/Au electrode and Nb 2 Pd 1– x Se 5 nanowires and agrees with the measured linear I ds – V ds features in Figure (c) and (e) . It is clear that the φ SB at the Cr/Au–Nb 2 Pd 1– x Se 5 interface can be modulated efficiently at the low V g regime, and the SBH changes insignificantly at a high V g regime, which is further depicted by the energy band diagram in Figure S6­(b) in the Supporting Information.…”
Section: Resultssupporting
confidence: 83%
“…The φ SB is estimated to be ∼15 meV, which indicates the ohmic contact between the Cr/Au electrode and Nb 2 Pd 1−x Se 5 nanowires and agrees with the measured linear I ds −V ds features in Figure 2(c) and 2(e). 34 It is clear that the φ SB at the Cr/Au−Nb 2 Pd 1−x Se 5 interface can be modulated efficiently at the low V g regime, and the SBH changes insignificantly at a high V g regime, which is further depicted by the energy band diagram in Figure S6(b) in the Supporting Information. When V g < V FB (V FB represents the flat band voltage), the φ SB is in a linear relationship with V g , and the primary carrier injection mechanism is thermionic transport.…”
Section: ■ Results and Discussionmentioning
confidence: 80%
“…Different strategies have been used to eliminate these defects and deepen the Fermi level. Prominent approaches include side metallic contact, use of hBN as a buffer layer over 2-D (Lizzit et al, 2022), ultraclean Ohmic vdW contacts (Boandoh et al, 2018;Wang et al, 2019;Kim et al, 2021;Jang et al, 2022;Wang and Chhowalla, 2022), different phases of 2-D material (Jiang et al, 2023), local doping, mechanical transfer of metal over 2-D (Liu et al, 2018), and semi-metallic contact (Chou et al, 2021;Shen et al, 2021;Jiang et al, 2023;Li et al, 2023;Wang et al, 2023), to name a few. The performance metrics of 2-D based FETs (fabricated devices) are plotted in Figure 3 for L G ≤ 50 nm.…”
Section: Nanoelectronics-specific Applications Of the 2-d Familymentioning
confidence: 99%
“…This is due to their capacity to sustain high carrier mobility even at monolayer thickness, thereby presenting significant opportunities for scaling down the gate length of a field-effect transistor (FET) to the sub-5 nm regime. Among these materials, 2H-phase MoTe 2 is regarded as a promising p-type semiconductor, showing suppressed electron transport in comparison to that of other TMDs 2 . However, the significant contact barriers at the interfaces between 2D semiconductors and conventional metal electrodes have notably limited the performance of devices. The contact barrier issue primarily stems from the fact that conventional metallization processes could induce chemical or physical damage to 2D semiconductors, leading to the formation of defect-induced gap states that ultimately pin the Fermi level at the charge neutrality level. ,, To address such interface states arising from the thermal deposition processes of conventional metals, alternative approaches have been proposed, including van der Waals (vdW) contacts via transferring metal electrodes, tunneling contacts, and ultrahigh vacuum evaporation. However, these methods still do not fully resolve the issue due to the persistent presence of metal-induced gap states (MIGS) between conventional metals and 2D semiconductors. , …”
Section: Introductionmentioning
confidence: 99%
“…The 2D metal/2D semiconductor contacts with weak interfacial interactions can mitigate the formation of interfacial defects resulting from physical and chemical damage caused by conventional metals and thus suppress the MIGS and Fermi-level pinning (FLP). 2D metallic materials such as 1T′-MoS 2 , 1T′-MoTe 2 , VSe 2 , and WTe 2 have been explored as contacts to form vdW interfaces in 2D transistors, exhibiting enhanced electrical performance compared to those using traditional metal contacts. ,, Most importantly, their work functions exhibit a remarkably broad range, spanning from 4.3 to 5.8 eV, beneficial to the low Schottky hole barriers for p-type transistors, which could be hardly achieved by traditional semimetal contacts. ,, However, significant challenges still exist when utilizing these 2D metal materials as electrodes in 2D transistors due to the lack of 2D semimetallic materials with high conductivity and excellent stability . In this regard, type II Dirac semimetal layered PtTe 2 has emerged as a novel semimetal material with high electrical conductivity (>10 6 S/m), which is significantly higher than most of other 2D metals, showing great promise in future applications such as mid-infrared and even terahertz photodetection. ,, …”
Section: Introductionmentioning
confidence: 99%