“…Different strategies have been used to eliminate these defects and deepen the Fermi level. Prominent approaches include side metallic contact, use of hBN as a buffer layer over 2-D (Lizzit et al, 2022), ultraclean Ohmic vdW contacts (Boandoh et al, 2018;Wang et al, 2019;Kim et al, 2021;Jang et al, 2022;Wang and Chhowalla, 2022), different phases of 2-D material (Jiang et al, 2023), local doping, mechanical transfer of metal over 2-D (Liu et al, 2018), and semi-metallic contact (Chou et al, 2021;Shen et al, 2021;Jiang et al, 2023;Li et al, 2023;Wang et al, 2023), to name a few. The performance metrics of 2-D based FETs (fabricated devices) are plotted in Figure 3 for L G ≤ 50 nm.…”