Achieving zero EUV patterning defect with dry photoresist system

Alvi, Mohammed Ali; Gottscho, Richard A.; Haider, Ali; Heo, SeongJun; Hsieh, PingYen; Huang, Ching-Chung; Jurczak, Gosia; Kam, Benjamin; Kim, Ji Yeon; Li, Billie; Li, Da; Nguyen, Henry T.; Yang, Ping; Peter, Daniel; Shamma, Nader; Silva, Anuja De; Tan, Samantha; Wang, Ethen; Weidman, Timothy W.; Wise, Rich; Wu, Morrey; Verveniotis, Elisseos; Volosskiy, Boris; Yu, Jengyi; Zaid, Hicham

doi:10.1117/12.2623499

Cited by 6 publications

(5 citation statements)

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“…This new process is based on negative tone development (NTD) metal-oxide-resist (MOR). It is optimized by a novel flow which consists of dry resist deposition and dry resist development [2] . This new process brings advantages and specificities that will impact the OPC flow.…”

Section: Introduction To Dry Photoresist Systemmentioning

confidence: 99%

EUV OPC modeling of dry photoresist system for pitch 32nm BEOL

Chen,

Rio,

Delorme

et al. 2024

Optical and EUV Nanolithography XXXVII

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As technology nodes further shrink, high yield becomes more and more challenging to achieve. Photoresist resolution (see Figure 2) and CD uniformity are two core yield limiters. This can be improved with the use of Lam's EUV dry photoresist system [1] , where the dry develop technique is used to replace wet develop. This process is also less prone to pattern collapse [1] . Another advantage of this new photoresist system consists in its higher dose sensitivity compared to conventional photoresists which leads to higher throughput [1][2] . High resolution process needs to be combined with optical proximity correction (OPC) to enable cutting edge EUV patterning. OPC relies on the capability of a model to predict accurately the behavior of such an innovative process. The purpose of this study is to provide a comprehensive quantification and characterization of the accuracy of an OPC model fitted for this process ADI and AEI (after carbon open).We generated wafers exposed with an OPC calibration reticle, processed with Lam's dry deposited and dry developed photoresist. The anchor is a horizontal line-space grating at pitch 32nm (Figure 2). We acquired CDSEM images of more than 1800 features ADI (after dry develop) and AEI (after carbon open). A subset of the features were collected through FEM ADI. To better understand the characteristics of the dry photoresist system, we used metrics such as proximity, MEEF, DoF and EL. ADI OPC models were calibrated using ASML Tachyon software. Finally, we evaluated the OPC model accuracy of both Tachyon FEM+ (physically motivated) and Newron (machine-learning) engines, ADI for pitch 32nm BEOL metal layer use case.

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Section: Introduction To Dry Photoresist Systemmentioning

confidence: 99%

EUV OPC modeling of dry photoresist system for pitch 32nm BEOL

Chen,

Rio,

Delorme

et al. 2024

Optical and EUV Nanolithography XXXVII

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“…At the same time, improved metrology precision and reproducibility would be required for high-volume manufacturing of the scaled devices. Dry photoresist (PR) has been demonstrated to meet these requirements in terms of defectivity and process window improvement [1]. Recently, dry resist has been studied to investigate its readiness for High Numerical Aperture (HNA) EUV lithography using various e-beam and optical methods [2].…”

Section: Introductionmentioning

confidence: 99%

Overlay metrology performance of dry photoresist towards high-NA EUV lithography

Canga,

Blanco Carballo,

Charley

et al. 2024

Metrology, Inspection, and Process Control XXXVIII

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In this work, we study the optical overlay metrology performance and impact of an integrated hard mask etch step using the dry resist process with High Numerical Aperture Extreme Ultraviolet Lithography (High NA EUVL)-related thicknesses. Diffraction-based overlay measurements were performed after dry development and integrated hard mask etching for different overlay target designs. The measurement precision for the after-dry development measurement is shown, and the benefits of using integrated hard mask etch overlay metrology with respect to after-dry development are discussed.

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“…The dry resist provides a simple, homogeneous, and stable composition of metal oxide network after deposition, EUV exposure, post-exposure bake, which breaks several long standing tradeoffs in EUV photoresist materials. 8 It allows to tune the conditions during the pattern development process to provide optimum dry photoresist integrity, to improve pattern fidelity and overall defectivity, and shows promising patterning performance towards 0.55NA EUVL. 9,10 To adopt this new resist and process into production of advanced node, only full model-based optical proximity correct (OPC) solutions can meet the required accuracy to control the edge placement errors.…”

Section: Introductionmentioning

confidence: 99%

Improving OPC model accuracy of dry resist for low k1 EUV patterning

Xu,

Gillijns,

et al. 2024

DTCO and Computational Patterning III

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Extreme ultraviolet lithography (EUVL) with a numerical aperture of 0.33 has been part of high-volume manufacturing since 2019. To guarantee the downscaling of the technology node, advanced material and patterning becomes very critical in terms of resolution, roughness, defectivity and process window. Therefore, several entities are developing new resists and processes. However, to adopt new resist and process into production, performing model-based optical proximity correct (OPC) is an essential step. Thus, an accurate OPC model is required. In this paper, we investigate the Siemens calibre CM1 OPC model accuracy of dry resist process, which is conducted on N5 M2 design (horizontal pitch 32nm).

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Achieving zero EUV patterning defect with dry photoresist system

Cited by 6 publications

References 0 publications

EUV OPC modeling of dry photoresist system for pitch 32nm BEOL

EUV OPC modeling of dry photoresist system for pitch 32nm BEOL

Overlay metrology performance of dry photoresist towards high-NA EUV lithography

Improving OPC model accuracy of dry resist for low k1 EUV patterning

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