Atomic layer deposition (ALD) is used to grow Al-incorporated HfO 2 to study the relationship between the film composition variations in the growth direction and thermal stability of the amorphous phase. Ten nm films with Hf:Al ALD cycle ratios equal to 3:1 and 8:1 remain amorphous up to 900 and 800 °C, respectively, and crystallize after a 30 s annealing at 950 and 850 °C, respectively. Angle-resolved X-ray photoelectron spectroscopy is used to reveal the periodicity of ALDgrown Al-incorporated HfO 2 . Generally, multiple cycles are required to realize a complete layer in ALD. Films with a Hf:Al ALD cycle ratio of g5 have a periodic HfO 2 -HfAl x O y structure, while films with a Hf:Al ALD cycle ratio of <4 appear more like homogeneous films. Increasing the thickness of a homogeneous-like film (Hf:Al = 3:1 ALD cycle ratio) from 10 to 40 nm leads to crystallization when annealed at 900 °C. Amorphous films with a periodic structure (Hf:Al = 8:1, ALD cycle ratio) do not display a dependence of crystallization on film thickness at the same 800 °C annealing condition. The factors controlling the film thermal stability are not only the overall amorphzier incorporation concentration but also how the amorphizer is distributed in the film. Changing the periodic structure of an ALD-grown Al-incorporated HfO 2 film is a potential method to tune the film thermal stability.