Acoustic emission and precision force-displacement observations of pointed and spherical indentation of silicon and TiN film on silicon

Shiwa, Mitsuharu; Weppelmann, E.R.; Münz, D.; Swain, Michael V.; Kishi, Toshiharu

doi:10.1007/bf01152149

Cited by 21 publications

(3 citation statements)

References 8 publications

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“…Unfortunately, the more recent spherical indentation with R = 5 µm of [40] also used Johnson's formula and the Authors do not disclose their cone angle.…”

Section: Silicon "Spherically" Indentedmentioning

confidence: 99%

Real and Fitted Spherical Indentations

Kaupp¹

2020

AMPC

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Spherical indentations that rely on original date are analyzed with the physically correct mathematical formula and its integration that take into account the radius over depth changes upon penetration. Linear plots, phase-transition onsets, energies, and pressures are algebraically obtained for germanium, zinc-oxide and gallium-nitride. There are low pressure phase-transitions that correspond to, or are not resolved by hydrostatic anvil onset pressures. This enables the attribution of polymorph structures, by comparing with known structures from pulsed laser deposition or molecular beam epitaxy and twinning. The spherical indentation is the easiest way for the synthesis and further characterization of polymorphs, now available in pure form under diamond calotte and in contact with their corresponding less dense polymorph. The unprecedented results and new possibilities require loading curves from experimental data. These are now easily distinguished from data that are "fitted" to make them concur with widely used unphysical Johnson's formula for spheres (" () 3 2 1 2 4 3 P h R E * = ") not taking care of the R/h variation. Its challenge is indispensable, because its use involves "fitting equations" for making the data concur. These faked reports (no "experimental" data) provide dangerous false moduli and theories. The fitted spherical indentation reports with radii ranging from 4 to 250 µm are identified for PDMS, GaAs, Al, Si, SiC, MgO, and Steel. The detailed analysis reveals characteristic features.

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“…Unfortunately, the more recent spherical indentation with R = 5 µm of [40] also used Johnson's formula and the Authors do not disclose their cone angle.…”

Section: Silicon "Spherically" Indentedmentioning

confidence: 99%

Real and Fitted Spherical Indentations

Kaupp¹

2020

AMPC

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“…With the advent of better technology, researchers have since developed novel applications, such as acoustic emission testing (Shiwa et al, 1996;Tymiak et al, 2003), impact testing (Fischer-Cripps, 2004), fracture toughness testing (Lawn et al, 1980;Palmqvist, 1957), constant strain rate/creep testing (Bower et al, 1993;Mayo and Nix, 1988;Storåkers and Larsson, 1994), high temperature testing (Atkins and Tabor, 1966;Kutty et al, 1996;Payzant et al, 1993) and most recently in situ electrical measurement testing (Mann et al, 2002;Ruffell et al, 2007) for the nanoindenter.…”

Section: Introductionmentioning

confidence: 98%

An analysis of nanoindentation in elasto-plastic solids

Poon

Rittel

Ravichandran

2008

International Journal of Solids and Structures

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a b s t r a c tThis paper examines the accuracy of the extracted elastic properties using the nanoindentation technique on elasto-plastic materials. The application of the correction factor evaluated in the linearly elastic case [Poon, B., Rittel, D., Ravichandran, G., 2008. An analysis of nanoindentation in linearly elastic solids. Int. J. Solids Structures 45 (24), 6018-6033.] on elastic-plastic materials is critically examined. It is then established that the accurate determination of the projected area of contact is found to be crucial for the accurate determination of elastic material properties. The conventional methods for the accurate determination of contact area are generally limited to ratios of Young's modulus over yield stress, E/r y < 30 for elastic-perfectly plastic materials, which is too stringent for most materials. Thus, a new electrical resistance method is proposed to measure directly the projected contact area. Using numerical simulations, it was found that with the accurate determination of A, the error associated with the extracted elastic material properties is reduced by more than 50% in some cases. Using the newly proposed procedure, the error is also found to be independent of E/r y and the tip radius, q, and it is only a function of Poisson's ratio, m. This suggests that the errors might be due to the residual stresses at the plastic imprint that were found to depend on m as well.

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“…The AE technique is widely used in conventional indentation tests to detect the occurrence of substantial deformation and cracking as the energy of Si is instantly released during the process (Weihs et al, 1991;Swain and Wittling, 1995;Shiwa et al, 1996;Perfilyev et al, 2017). Despite its widespread use, the mechanical behaviors of Si under dynamic strain-rate loading are less understood.…”

Section: Phase Transformation Of Siliconmentioning

confidence: 99%

Dynamic damage analysis of thin film stacked structures for microelectronic devices

Zhao¹

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In the context of the megatrends of remote working, the development of artificial intelligence, and electric vehicle applications, there is a great demand for betterperforming and multi-functional integrated circuit (IC) chips to fill the technology gaps.Moreover, the demand for package minimization and rapid production of power electronic products have raised a serious concern about the robustness of thin-film stacked structures in the bond pad of IC chips, especially in the processes of wirebonding, wafer probing, and die ejection.Recently, hard copper (Cu) wires have been widely applied to replace traditional soft gold (Au) wires in the wire-bonding process. It is not only because the price of Cu wires is more competitive than that of Au wires, but also Cu wires possess superior electrical, mechanical, and thermal properties over Au wires. However, the dynamic contact between the Cu free air ball (FAB) and the bond pad surface leads to excessive deformation and thus significant damage or failure in the brittle substrate beneath the top metallization pad of IC chips. Moreover, the damaged sites are invisible, which makes it difficult to predict their occurrences. Hence, this research aims to study the dynamic deformation and damage behavior of the thin-film stacked structure during high strain-rate indentation loading through experimental, statistical, and analytical methods.First, a dynamic strain-rate (DSR) model has been developed for analyzing the dynamic response of a thin-film stacked structure consisting of a top metallization layer (copper-titanium CuTi) and an intermediate dielectric layer (silicon nitride Si3N4) on the Si substrate at varying loading rates. In the DSR model, the exponential indentation strain rate-time history is established by maintaining the constant ratio of the Abstract X instantaneous loading rate to load (Ṗ/P) in the indentation tests. The relationship between the indentation strain rate and indentation strain at different Ṗ/P was analyzed for characterizing the DSR model. The indentation stress-strain curves at different testing protocols were plotted to investigate the rate-dependent behaviors of the thinfilm stacked structure. Second, DSR indentation tests integrated with the acoustic emission (AE) sensingtechnique were conducted on a Si (100) wafer to investigate the phase transformation at low and high Ṗ/P. The occurrence of phase transformation was detected by an AE event and corresponds to an onset load. It was found that high Ṗ/P leads to a decrease in the phase transformation threshold, which could be attributed to an increase in the shear stress with increasing strain rates. The activation volume V* for the onset of phase transformation was determined based on two methods of the strain rate sensitivity and the nucleation theory-based model. Both analysis methods yield comparable V* and well proximate the size of the nucleated β-Sn phase, suggesting that the phase transformation is predominantly induced by shearing under the non-hydrostatic condition. Moreover, an incre...

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Acoustic emission and precision force-displacement observations of pointed and spherical indentation of silicon and TiN film on silicon

Cited by 21 publications

References 8 publications

Real and Fitted Spherical Indentations

Real and Fitted Spherical Indentations

An analysis of nanoindentation in elasto-plastic solids

Dynamic damage analysis of thin film stacked structures for microelectronic devices

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