Acoustic-wave amplification in high-mobility semiconductors at microwave frequencies

Turner, C. W.; Duzer, T. Van; Weller, K.P.

doi:10.1049/el:19670126

Cited by 15 publications

(8 citation statements)

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“…Although the presence of these acoustic domains limits the utility of the acoustoelectric amplification process/,2 the domains are interesting in themselves. The results presented in this paper will show that a hydrodynamical theory, which is an extension of the theory of Steele7 and Turner et al, 8 not only accounts for both Mode I and Mode II operation but also yields valuable insight into the physical basis of the acoustoelectric effect in InSb. 3 -6 It has been found experimentally that, in sufficiently long specimens of InSb, both phenomena possess nearly identical applied field threshold dependences and exhibit two distinct modes of operation.…”

Section: Introductionmentioning

confidence: 63%

“…work4,1l; the theory of Steele 7 and Turner et al 8 will hereinafter be referred to as the STVW theory.…”

Section: Hydrodynamical Theory Of Acousto-electric Effects In Insbmentioning

confidence: 99%

“…Kino and Route 4 first examined th~ zero-magneticfield hydrodynamic theory and they showed that the maximum acoustoelectric interaction growth rate occurs for b=O and wv~O, at the frequency (8) where r= (uox-v.) /VT= -vsY/VT. They also pointed out that in order to achieve the maximum growth rate the drift velocity must approach the value of the the~mal velocity which, by (8), indicates that maximum growth rates can only be achieved at extremely high frequencies.…”

Section: Physical Mechanism Of Mode I Operationmentioning

confidence: 99%

“…Because of this complexity it has been analyzed numerically, using the method of interval halving, in order to solve for the frequency of maximum gain. In the aforementioned limit, (7) again reduces to the hydrodynamical theory of Kino and Route 4 (it was first shown to reduce to this theory when b=O) and the frequency of maximum gain is given by (8). 10(a).…”

Section: Frequency Dependence Of the Acoustoelectric Gainmentioning

confidence: 99%

“…Recently it has been concluded by several investigators that although the magnetic field enhanced hydrodynamical theory of Steele1 and Turner et al 8 can account for Mode II operation, more detailed microscopic theories 1 . Although the presence of these acoustic domains limits the utility of the acoustoelectric amplification process/,2 the domains are interesting in themselves.…”

Section: Introductionmentioning

confidence: 99%

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Acoustoelectric Effects in Indium Antimonide

Fleming

Rowe

1971

Journal of Applied Physics

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The acoustoelectric interaction in InSb is developed and investigated on the basis of a hydrodynamical theory. Comparison of numerical results obtained from this theory with the corresponding numerical results from more detailed microscopic theories reveals that the essential features of the microscopic theories are also present in the simpler hydrodynamical theory. In particular, the hydrodynamical theory accounts for the existence of two distinct modes of acoustic domain formation and for the reduction of peak acoustic gain at low values of magnetic field. Valuable insight into the physical basis of the acoustoelectric effect is obtained and it is shown that in the limit of large electron drift velocities and small transverse magnetic field strengths, the Mode I-type acoustoelectric interaction arises from a drift-enhanced quenching of electron diffusion effects. Moreover it is found that the frequency of maximum acoustoelectric gain, as given by the hydrodynamical theory of the present paper, does not occur at the fixed frequency 10= (WRWD)1!2/27r, but rather, it is dependent upon the exact values of drift velocity and magnetic field strength. Several computer-generated plots are presented and discussed in order to fully illustrate the results of this investigation.

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Section: Introductionmentioning

confidence: 63%

“…work4,1l; the theory of Steele 7 and Turner et al 8 will hereinafter be referred to as the STVW theory.…”

Section: Hydrodynamical Theory Of Acousto-electric Effects In Insbmentioning

confidence: 99%

Section: Physical Mechanism Of Mode I Operationmentioning

confidence: 99%

Section: Frequency Dependence Of the Acoustoelectric Gainmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Acoustoelectric Effects in Indium Antimonide

Fleming

Rowe

1971

Journal of Applied Physics

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Acoustic amplification in InSb in crossed electric and magnetic fields

Duncan

Livingstone

1972

Phys. Stat. Sol. (a)

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The influence of the specimen geometry on the acousto‐electric amplification in InSb with a crossed electric and magnetic field configuration has been investigated both experimentally and theoretically. Three specimens were studied which had a length to width ratio (L/W) ranging from 1:1 to 4:1 and a corresponding acoustic gain of 5 dB cm−1 and 52 dB cm−1 was observed. The effect of the crystal geometry on the amplification can be attributed to the distortion of the equipotential and current stream lines particularly when μ B ≫ 1 and not L/W ≫ 1. The equipotential and current streamlines were calculated for different values of L/W using the method of conformal analysis, and the electronic gain computed using the average drift velocity obtained from this analysis. The dependence of the theoretical acoustic amplification on the length to width ratio as calculated by this method was found to be in good agreement with that observed experimentally. The maximum electronic gain observed here was 87 dB, however due to the very high acoustic transducer losses, a terminal gain of only 6 dB was observed. The microwave noise emission from the amplifier was found to be composed of both acoustic and electromagnetic components, and under certain conditions, the magnitude of the acoustic noise power at the acoustic output was comparable with the theoretical value.

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Acoustoelectric effects in piezoelectric semiconductors with main emphasis on CdS and ZnO

Meyer

Jørgensen

Advances in Solid State Physics

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Acoustic-wave amplification in high-mobility semiconductors at microwave frequencies

Cited by 15 publications

References 0 publications

Acoustoelectric Effects in Indium Antimonide

Acoustoelectric Effects in Indium Antimonide

Acoustic amplification in InSb in crossed electric and magnetic fields

Acoustoelectric effects in piezoelectric semiconductors with main emphasis on CdS and ZnO

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