Acoustically Driven Photon Antibunching in Nanowires

Hernández-Mínguez, A.; Möller, M.; Breuer, Steffen; Pfüller, Carsten; Somaschini, Claudio; Lazić, S.; Brandt, O.; García‐Cristóbal, A.; Lima, M. M. de; Cantarero, A.; Geelhaar, Lutz; Riechert, H.; Santos, P. V.

doi:10.1021/nl203461m

Cited by 62 publications

(77 citation statements)

References 24 publications

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“…This effect has been exploited as a means, for example, of storing light in quantum wells 5 and generating and manipulating single electrons and photons, particularly for metrology and quantum information processing. [6][7][8] Recently, acoustoelectric charge transport has been investigated in graphene, 9,10 and we have previously reported acoustoelectric charge transport at room temperature in large area graphene, transferred onto lithium niobate, between contacts up to 500 lm apart. 11 Using double finger inter-digital transducers (IDTs), we characterised the acoustoelectric current as a function of both SAW intensity and frequency, and at all SAW frequencies a positive acoustoelectric current was observed in the direction of SAW, indicating the transport of holes; consistent with the fact that CVD graphene is thought to be p-doped by water, 12 and the PMMA residues and etchant salts arising from the transfer process.…”

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confidence: 99%

Temperature dependence of the acoustoelectric current in graphene

Bandhu

Nash

2014

Applied Physics Letters

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The acoustoelectric current in graphene has been investigated as a function of temperature, surface acoustic wave (SAW) intensity, and frequency. At high SAW frequencies, the measured acoustoelectric current decreases with decreasing temperature, but remains positive, which corresponds to the transport of holes, over the whole temperature range studied. The current also exhibits a linear dependence on the SAW intensity, consistent with the interaction between the carriers and SAWs being described by a relatively simple classical relaxation model. At low temperatures and SAW frequencies, the measured acoustoelectric current no longer exhibits a simple linear dependence on the SAW intensity, and the direction of the acoustoelectric current is also observed to reverse under certain experimental conditions.

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confidence: 99%

Temperature dependence of the acoustoelectric current in graphene

Bandhu

Nash

2014

Applied Physics Letters

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“…The use of a highly piezoelectric LiNbO 3 crystal provides strong strain and electric fields of the propagating SAW, which extend to the optically active nanowire heterostructures deposited on the surface. 5,6,23,24 The micro-photoluminescence (µ-PL) experiments were performed at 10 K on a sample mounted in a cold-finger liquid helium flow cryostat equipped with rf connections for the excitation of the IDTs. A continuous wave helium-cadmium laser operating at λ exc = 442 nm was used for PL excitation.…”

Section: -mentioning

confidence: 99%

Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

et al. 2015

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The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.Surface acoustic waves induce periodic strain and piezoelectric fields near a semiconductor surface which can dynamically modify their basic properties. The use of SAWs is an expanding research field, which has been widely applied to semiconductor quantum wells (QWs) 1-3 , wires 4-6 and dots (QDs) [7][8][9][10][11] .By controlling the excitonic emission in III-V semiconductor QDs by SAWs, high repetition rate single photon sources (SPSs) 7-9 and periodic laser mode feeding 12 have been reported. Also, dynamic control of individual QDs 11 and on-demand single-electron transfer between distant quantum dots 13 have been demonstrated. In a more general context, a proposal for onchip quantum transducers based on SAWs enabling long-range coupling of many qubits has been recently put forward 14 . In addition to the band-edge modulation, which determines the QD emission wavelength, the tunable strain field of the SAW can be used to modify other properties related to the band structure, as the exciton binding energy, in a similar way as static strain field 15 . While most of the SAW-related work reported in semiconductor structures refers to III-V systems, studies on group III-Nitrides are scarce. Extension of these techniques to group III-Nitride systems is important, as their large gap enables highpower/high-temperature applications and high repetition rate SPSs covering a broad spectral range. Also, the high sound velocities and the stronger electromechanical coupling coefficients of nitrides, as compared to (Al,Ga

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“…Radio frequency surface acoustic waves (SAWs) represent a particularly attractive and powerful tool to probe and dynamically control charge excitations in semiconductor heterostructure including Quantum Hall systems [12,13,14], charge transport in oneand two-dimensional electron channels [15,16], transport of charges [17,18,19], spins [20] or dipolar excitons [21] and precisely timed carrier injection into QDs for low-jitter single photon emission [22,23,24,25]. Recently, these concepts have been transferred to intrinsic nanowires (NWs) [26] and nanotubes [27] and NWs containing complex radial and axial heterostructures [28,29,30].…”

Section: Introductionmentioning

confidence: 99%

Radio frequency occupancy state control of a single nanowire quantum dot

Weiß¹,

Schülein²,

Kinzel³

et al. 2014

J. Phys. D: Appl. Phys.

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Abstract.The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs − AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity oscillations of neutral and negatively charged excitons. At high acoustic power levels these oscillations become anticorrelated which enables direct acoustic programming of the dot's charge configuration, emission intensity and emission wavelength. Numerical simulations confirm that the observed modulations arise from acoustically controlled modulations of the electron and electron-hole-pair concentrations at the position of the quantum dot.

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Acoustically Driven Photon Antibunching in Nanowires

Cited by 62 publications

References 24 publications

Temperature dependence of the acoustoelectric current in graphene

Temperature dependence of the acoustoelectric current in graphene

Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

Radio frequency occupancy state control of a single nanowire quantum dot

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