2018
DOI: 10.1088/1361-6463/aab8bd
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Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substrates

Abstract: Surface plasmon polaritons in graphene couple strongly to surface phonons in polar substrates leading to hybridized surface plasmon-phonon polaritons (SPPPs). We demonstrate that a surface acoustic wave (SAW) can be used to launch propagating SPPPs in graphene/h-BN heterostructures on a piezoelectric substrate like AlN, where the SAW-induced surface modulation acts as a dynamic diffraction grating. The efficiency of the light coupling is greatly enhanced by the introduction of the h-BN film as compared to the … Show more

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Cited by 27 publications
(19 citation statements)
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“…A transport-dominated regime, with τ >> τ ee , is assumed, where τ and τ ee are, respectively, the carrier transport and the electron-electron interaction times. h-BN is an anisotropic wide bandgap insulator whose in-and out-of-plane frequencydependent relative permittivities, ϵ x ðωÞ and ϵ z ðωÞ respectively, have opposite sign in the two reststrahlen bands, thus supporting a series of hyperbolic phonon modes that are confined within these bands (see Supplementary Note 1 for mathematical expressions and graphs of ϵ xðzÞ ðωÞ) 36,41 . To model the h-BN layer, we first define the expressions ϵ s ðωÞ ¼ ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ffi ϵ z ðωÞϵ x ðωÞ p and ϵ a ðωÞ ¼ ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ϵ z ðωÞ=ϵ x ðωÞ p , that are plotted in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…A transport-dominated regime, with τ >> τ ee , is assumed, where τ and τ ee are, respectively, the carrier transport and the electron-electron interaction times. h-BN is an anisotropic wide bandgap insulator whose in-and out-of-plane frequencydependent relative permittivities, ϵ x ðωÞ and ϵ z ðωÞ respectively, have opposite sign in the two reststrahlen bands, thus supporting a series of hyperbolic phonon modes that are confined within these bands (see Supplementary Note 1 for mathematical expressions and graphs of ϵ xðzÞ ðωÞ) 36,41 . To model the h-BN layer, we first define the expressions ϵ s ðωÞ ¼ ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ffi ϵ z ðωÞϵ x ðωÞ p and ϵ a ðωÞ ¼ ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ϵ z ðωÞ=ϵ x ðωÞ p , that are plotted in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The en waves when t Fig [19,20], quan des [24][25][26][27] Ps on the is leads to dielectric ouin zone he folded on formed alize band must be frequency es another e and the has been he surface t separate s of these ce of the AW-based of charge including tion metal utions, the 0s [28]. In these studies, the SAW fields were used to generate "dynamic" grating on the metal surfaces [29][30][31] or graphene layers [32][33][34] to interact with surface plasmon or light.…”
Section: Introductionmentioning
confidence: 99%
“…In figure 2.8 (a), measured FTIR transmittance spectra of G/AlN/Si are shown and compared with bare AlN/Si and Si substrates. The decrease in the transmittance between 0.08 eV and 0.12 eV is due to the reststrahlen band of the AlN (ω TO AlN = 0.083 eV, ω LO AlN = 0.11 eV [115]), while the overall transmittance is decreased to approximately 50% by the free carrier absorption in Si. Figure 2.8 (b) shows the FTIR reflectance spectra of h-BN/AlN/Si and AlN/Si.…”
Section: Fourier Transform Infrared Spectroscopy (Ftir)mentioning
confidence: 99%