Acoustoelectric charge injection in semiconductors

A new acousto{electrical method making use of transient transverse acousto{electric voltage (TAV) to study solid state structures is reported. This voltage arises after a surface acoustic wave (SAW) generating the signal is switched o . Related measurements consist in detecting the shape of transient voltage and its spectral and temperature dependence. Both theory and experiment show that this method is an e ective tool to characterize trapping centers in the bulk as well as at surfaces or interfaces of epitaxial semiconductor structures.

show abstract

“…T p < t (5) where T p is the pulse duration. The radio frequency impulses and the corresponding TAV pulse are presented on g. 1.…”

Section: A Mechanisms Of the Tav Originmentioning

confidence: 99%

Acousto-electric study of interface trapping defects in GaAs epitaxial structures

Ostrovskii¹,

Saiko²,

Olikh³

et al. 1998

J. Phys. Stud.

View full text Add to dashboard Cite

show abstract

“…Also, the quality and performance of multilayered and epitaxial semiconductor structures are known to be strongly affected by defects [1][2][3] located at the interfaces between epilayers and substrates. Very recently, some data indicating that lattice defects influence the transient acoustoelectrical effect in semiconductors became available [4][5][6]. Among other experimental techniques utilizing the acoustoelectric effect, measurement of the transient transverse acoustoelectric voltage (TAV) generated in semiconductors has been used in the past [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Determination of deep levels' parameters in epi-GaAs by a transient acoustoelectric technique

Ostrovskii

Saiko

Walther

1998

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

A new acoustoelectric method is developed in order to study solid state layered structures. The method is based on the transient transverse acoustoelectric voltage (TAV) measurements. The decay of the TAV signal is read when a surface acoustic wave (SAW) producing the signal is switched off. The shape of the transient voltage and its spectral dependence on the wavelength of a light irradiation are studied. A theoretical model is presented to explain the transient TAV data. The results demonstrate that the transient acoustoelectric technique is an effective means of characterizing trapping centres in the bulk and at surfaces or interfaces of epitaxial semiconductor structures.

show abstract

Theoretical and experimental study of plate acoustic waves in ZX-cut lithium niobate

Klymko

Nadtochiy

Ostrovskii

2008

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

View full text Add to dashboard Cite

Acoustoelectric charge injection in semiconductors

Cited by 3 publications

References 17 publications

Acousto-electric study of interface trapping defects in GaAs epitaxial structures

Acousto-electric study of interface trapping defects in GaAs epitaxial structures

Determination of deep levels' parameters in epi-GaAs by a transient acoustoelectric technique

Theoretical and experimental study of plate acoustic waves in ZX-cut lithium niobate

Contact Info

Product

Resources

About