Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

Drichko, I. L.; Diakonov, A. M.; Lebedeva, E. V.; Smirnov, I. Yu.; Mironov, O. A.; Kummer, Martin; Känel, H. von

doi:10.1063/1.3251568

Cited by 7 publications

(13 citation statements)

References 9 publications

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“…Note that the theoretical estimation C = 2e 2 /(πm c cτ q ) (see Ref. [20]) yields the very close value C ≈ 0.69 meV T −1/2 for the quantum relaxation time τ q ≈ 1 ps calculated for our sample from the Shubnikov-de Haas oscillations at the temperature 1.7 K [15]. The obtained value of the out-of-plane g factor differs from that of the heavy holes in bulk Ge, |g bulk | = |6K| ≈ 20.4.…”

Section: Saw Velocitysupporting

confidence: 72%

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In-plane magnetic field effect on hole cyclotron mass andgzfactor in high-mobility SiGe/Ge/SiGe structures

et al. 2014

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The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density p = 6 × 10 11 cm −2 was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85 MHz and magnetic fields B of up to 18 T in the temperature range of 0.3-5.8 K. The acoustic effects were also measured as a function of the tilt angle of the magnetic field with respect to the normal of the two-dimensional channel at T = 0.3 K. It is shown that at the minima of the conductivity oscillations holes are localized on the Fermi level, and that there is a temperature domain in which the high-frequency conductivity in the bulk of the quantum well is of the activation nature. The analysis of the temperature dependence of the conductivity at odd filling factors enables us to determine the effective g z factor. It is shown that the in-plane component of the magnetic field leads to an increase of the cyclotron mass and to a reduction of the g z factor. We developed a microscopic theory of these effects for the heavy-hole states of the complex valence band in quantum wells which describes well the experimental findings.

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Section: Saw Velocitysupporting

confidence: 72%

“…(1) and (2) of Ref. [15]. Below we focus on the real part of the ac conductivity only since it enables us to determine the parameters of the energy spectrum.…”

Section: Saw Velocitymentioning

confidence: 99%

In-plane magnetic field effect on hole cyclotron mass andgzfactor in high-mobility SiGe/Ge/SiGe structures

et al. 2014

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“…One of the control methods is the arrangement of a heterostructure with a conductivity variable by an applied electric field on the surface of the plate [ 43 , 44 ]. Similar studies were carried out earlier for forward and backward acoustic waves in various piezoelectric materials [ 45 , 46 , 47 , 48 , 49 ]. As for evanescent acoustic waves in piezoelectric plates, such works are currently absent.…”

Section: Introductionsupporting

confidence: 58%

The Experimental Registration of the Evanescent Acoustic Wave in YX LiNbO3 Plate

Smirnov

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Teplykh

et al. 2021

Sensors

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Evanescent acoustic waves are characterized by purely imaginary or complex wavenumbers. Earlier, in 2019 by using a three dimensional (3D) finite element method (FEM) the possibility of the excitation and registration of such waves in the piezoelectric plates was theoretically shown. In this paper the set of the acoustically isolated interdigital transducers (IDTs) with the different spatial periods for excitation and registration of the evanescent acoustic wave in Y-cut X-propagation direction of lithium niobate (LiNbO3) plate was specifically calculated and produced. As a result, the possibility to excite and register the evanescent acoustic wave in the piezoelectric plates was experimentally proved for the first time. The evanescent nature of the registered wave has been established. The theoretical results turned out to be in a good agreement with the experimental ones. The influence of an infinitely thin layer with arbitrary conductivity placed on a plate surface was also investigated. It has been shown that the frequency region of an evanescent acoustic wave existence is very sensitive to the changes of the electrical boundary conditions. The results obtained may be used for the development of the method of the analysis of thin films electric properties based on the study of evanescent waves.

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“…In the nonlinear regime, when the ac conductivity begins to depend on the SAW intensity, one can also determine the energy relaxation time. 4 Our experimental configuration, which we refer to as "hybrid", opens up the possibility to not only explore materials that lack an inversion center, such as A III B V , but also those with an inversion center, e.g. Ge, Si etc.…”

Section: Introductionmentioning

confidence: 99%

Acoustic studies of ac conductivity mechanisms inn-GaAs/AlxGa1−
Drichko
¹
,
Smirnov
²
,
Суслов
³

et al. 2011
Phys. Rev. B
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In case of a of the heterostructure n-GaAs/AlGaAs with sheet density n = 2 × 10 11 cm −2 and mobility µ ≈ 2 × 10 6 cm 2 /V·s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we demonstrate the wide applicability of acoustic methods for determining the general conduction parameters of a two dimensional electron gas. We also examine the mechanisms of lowtemperature conductivity in the minima of oscillations of high frequency conductivity in the IQHE and FQHE regimes. In the magnetic field region where electrons are delocalized, the parameters determined by the acoustic technique do not differ from those determined by a direct current. However, the acoustic measurements do not require Hall bars and electrical contacts to be fabricated. In the minima of IQHE and FQHE oscillations electrons are localized, and ac conductivity turns to be via hopping. An analysis of the high frequency conductivity in the QHE regime has been carried out within a "two site" model. Furthermore, measurements of acoustoelectric effects in a tilted magnetic field provided the dependence of the activation energy on magnetic field in the fractional quantum Hall effect regime at ν=2/3. PACS numbers: 73.23.-b, 73.43.Qt arXiv:1112.0743v2 [cond-mat.mes-hall] 7 Dec 2011 FIG. 1. Sketches of the (a) acoustic experiment setup and (b) sample.

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Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

Cited by 7 publications

References 9 publications

In-plane magnetic field effect on hole cyclotron mass andgzfactor in high-mobility SiGe/Ge/SiGe structures

In-plane magnetic field effect on hole cyclotron mass andgzfactor in high-mobility SiGe/Ge/SiGe structures

The Experimental Registration of the Evanescent Acoustic Wave in YX LiNbO3 Plate

Acoustic studies of ac conductivity mechanisms inn-GaAs/AlxGa1−
Drichko
¹
,
Smirnov
²
,
Суслов
³

et al. 2011
Phys. Rev. B
Self Cite
10
1
10
0
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Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

Cited by 7 publications

References 9 publications

In-plane magnetic field effect on hole cyclotron mass andgzfactor in high-mobility SiGe/Ge/SiGe structures

In-plane magnetic field effect on hole cyclotron mass andgzfactor in high-mobility SiGe/Ge/SiGe structures

The Experimental Registration of the Evanescent Acoustic Wave in YX LiNbO3 Plate

Acoustic studies of ac conductivity mechanisms inn-GaAs/AlxGa1−Drichko1, Smirnov2, Суслов3 et al. 2011Phys. Rev. BSelf Cite101100View full textAdd to dashboardCite

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Acoustic studies of ac conductivity mechanisms inn-GaAs/AlxGa1−
Drichko
¹
,
Smirnov
²
,
Суслов
³

et al. 2011
Phys. Rev. B
Self Cite
10
1
10
0
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