It is experimentally shown that in bulk InSb and Te single crystals, during the formation and excitation of the dissipative structure in the non-equilibrium electron-hole plasma, in the case of a presence of longitudinal autosolitons, the carrier concentration decreases outside the autosolitons, while it increases in the case of transverse autosolitons. The longitudinal autosolitons, forming in the non-equilibrium electron-hole plasma by Joule heating, are considered to be cold, and the transverse autosolitons to be hot.