Semicond. Phys. Quantum Electron. Optoelectron.
 2003
DOI: 10.15407/spqeo6.04.450
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Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures

O. Ya. Olikh1

Abstract: The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n + epitaxial structures have been investigated using acoustoelectric transient spectroscopy.

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