2011
DOI: 10.1116/1.3653257
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Actinic characterization of extreme ultraviolet bump-type phase defects

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Cited by 5 publications
(2 citation statements)
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“…These programmed defects have previously been studied using various techniques. [7][8][9] They consist of squares of fixed height and varied width patterned onto the substrate before multilayer deposition. We imaged the defects using σ = 0.25 monopole illumination, an NA of 0.0825, and wavelength of 13.5 nm.…”
Section: Amplitude and Phase Defectsmentioning
confidence: 99%
“…These programmed defects have previously been studied using various techniques. [7][8][9] They consist of squares of fixed height and varied width patterned onto the substrate before multilayer deposition. We imaged the defects using σ = 0.25 monopole illumination, an NA of 0.0825, and wavelength of 13.5 nm.…”
Section: Amplitude and Phase Defectsmentioning
confidence: 99%
“…However, it is difficult to measure the actual CDs of extreme ultraviolet (EUV) lithography masks, given that the optical properties of the mask materials are wavelength specific and the angle of incidence of the EUV light is oblique. [1][2][3] Several actinic mask inspection and metrology techniques have been developed for use with EUV masks, [4][5][6][7][8][9] and mask contamination is mostly investigated through topography analysis. 10 However, there is no appropriate tool to investigate the effects of mask contamination on the imaging properties.…”
Section: Introductionmentioning
confidence: 99%