Actinic review of EUV masks: first results from the AIMS EUV system integration

Weiß, Markus; Hellweg, Dirk; Peters, Jan Hendrik; Perlitz, Sascha; Garetto, Anthony; Goldstein, Michael

doi:10.1117/12.2046302

Cited by 7 publications

(4 citation statements)

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“…The excellent visual impression of the AIMS TM EUV images could be already observed by the first light images [3] and the low noise level of the images was noted in [5]. The tool acceptance test contains a measurement of the image contrast.…”

Section: Imaging Performancementioning

confidence: 99%

“…The time the sequence has taken, was extracted from the log-files and results in a run-rate of 45 sites per hour significantly exceeding the specification of 27.5 sites per hour. Figure 8 shows the run-rate specification table presented in previous publications [3] with a column for currently measured tool performance added. For the setting using high pupil fill of 77% corresponding to a large conventional setting with sigma 0.2 -0.9 the specification is not yet reached.…”

Section: Productivitymentioning

confidence: 99%

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Actinic review of EUV masks: performance data and status of the AIMS EUV System

et al. 2016

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The EUV mask infrastructure is of key importance for the successful introduction of EUV lithography into volume production. In particular, for the production of defect free masks an actinic review of potential defect sites is required. ZEISS and the SUNY POLY SEMATECH EUVL Mask Infrastructure consortium started a development program for such an EUV aerial image metrology system, the AIMS™ EUV. In this paper, we provide measurement data on the system's key specifications and discuss its performance and capability status.

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Section: Imaging Performancementioning

confidence: 99%

Section: Productivitymentioning

confidence: 99%

Actinic review of EUV masks: performance data and status of the AIMS EUV System

et al. 2016

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“…The e-beam inspection system in combination with an actinic EUV AIMS tool could be used for defect deposition/repair at the mask shop (and wafer fab). The first imaging data from a commercial EUV aerial imaging system was obtained recently and the first tools are expected to be delivered to customers in 2015 [18].…”

Section: Euv Maskmentioning

confidence: 99%

EUV lithography: progress, challenges, and outlook

Wurm¹

2014

SPIE Proceedings

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Extreme Ultraviolet Lithography (EUVL) has been in the making for more than a quarter century. The first EUVL production tools have been delivered over the past year and chip manufacturers and suppliers are maturing the technology in pilot line mode to prepare for high volume manufacturing (HVM). While excellent progress has been made in many technical and business areas to prepare EUVL for HVM introduction, there are still critical technical and business challenges to be addressed before the industry will be able to use EUVL in HVM.

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“…EUV microscopes have been long developed to observe circuit pattern images at actual exposure wavelength, that is, under EUV light . There are also microscopes that make possible observation at the same conditions as in exposure machines . With these microscopes, however, one can observe intensity images rather than phase images.…”

Section: Introductionmentioning

confidence: 99%

Development of an EUV Microscope with Focused Coherent EUV Based on Coherent Diffraction Imaging Method for Defect Evaluation on an EUV Mask

Harada

Hashimoto

Watanabe

2018

Elect Comm in Japan

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SUMMARY For evaluation of defects on extreme ultraviolet (EUV) masks at the blank state of manufacturing, we developed a microcoherent EUV scatterometry microscope (micro‐CSM). The illumination source is coherent EUV light with a 140‐nm focus diameter on the defect using a Fresnel zoneplate. This system directly observes the reflection and diffraction signals from a phase defect. The phase and the intensity image of the defect is reconstructed with the diffraction images using ptychography, which is an algorithm of the coherent diffraction imaging. We observed programmed phase defect on a blank EUV mask. Phase distributions of these programmed defects were well reconstructed quantitatively. We also observed actual defects which were inspected by the ABI tool. Actual amplitude defect and phase defect images were reconstructed with intensity and phase contrast. The reconstructed image indicated the defect type of these defect. The micro‐CSM is very powerful tool to evaluate an EUV phase defect.

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Actinic review of EUV masks: first results from the AIMS EUV system integration

Cited by 7 publications

References 1 publication

Actinic review of EUV masks: performance data and status of the AIMS EUV System

Actinic review of EUV masks: performance data and status of the AIMS EUV System

EUV lithography: progress, challenges, and outlook

Development of an EUV Microscope with Focused Coherent EUV Based on Coherent Diffraction Imaging Method for Defect Evaluation on an EUV Mask

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