Activating ZnO nanorod photoanodes in visible light by Cu ion implantation

Wang, Meng; Ren, Feng; Cai, Guangxu; Liu, Yichao; Shen, Shaohua; Guo, Liejin

doi:10.1007/s12274-013-0401-7

Cited by 93 publications

(60 citation statements)

References 58 publications

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“…Ion implantation is a standard technique used to dope semiconductors [5], [14]. It has now been well established that when applied to nanostructures, it may cause ion-induced bending (IIB).…”

Section: Introductionmentioning

confidence: 99%

Effects of temperature on the ion-induced bending of germanium and silicon nanowires

Camara

Hanif

Tunes

et al. 2017

Mater. Res. Express

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Nanowires can be manipulated using an ion beam via a phenomenon known as ion-induced bending (IIB). While the mechanisms behind IIB are still the subject of debate, accumulation of point defects or amorphisation are often cited as possible driving mechanisms. Previous results in the literature on IIB of Ge and Si nanowires have shown that after irradiation the aligned nanowires are fully amorphous. Experiments were recently reported in which crystalline seeds were preserved in otherwise-amorphous ion-beam-bent Si nanowires which then facilitated solid-phase epitaxial growth (SPEG) during subsequent annealing. However, the ion-induced alignment of the nanowires was lost during the SPEG. In this work, in situ ion irradiations in a transmission electron microscope at 400°C and 500°C were performed on Ge and Si nanowires, respectively, to supress amorphisation and the build-up of point defects.Both the Ge and Si nanowires were found to bend during irradiation thus drawing into question the role of mechanisms based on damage accumulation under such conditions. These experiments demonstrate for the first time a simple way of realigning single-crystal Ge and Si nanowires via IIB whilst preserving their crystal structure.

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Section: Introductionmentioning

confidence: 99%

Effects of temperature on the ion-induced bending of germanium and silicon nanowires

Camara

Hanif

Tunes

et al. 2017

Mater. Res. Express

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“…An alternative approach is to use a combination of a photocathode and a photoanode to drive the overall water splitting. To gain better solar to fuel efficiency, ideally we want to maximize visible light absorption [7][8][9][10]. Silicon is known to have a suitable band gap that is well matched to the solar spectrum.…”

Section: Introductionmentioning

confidence: 99%

Nickel-coated silicon photocathode for water splitting in alkaline electrolytes

Feng

Gong²,

Kenney³

et al. 2015

Nano Res.

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Photoelectrochemical (PEC) water splitting is a promising approach to harvest and store solar energy [1]. Silicon has been widely investigated for PEC photoelectrodes due to its suitable band gap (1.12 eV) matching the solar spectrum [2]. Here we investigate employing nickel both as a catalyst and protecting layer of a p-type silicon photocathode for photoelectrochemical hydrogen evolution in basic electrolytes for the first time. The silicon photocathode was made by depositing 15 nm Ti on a p-type silicon wafer followed by 5 nm Ni. The photocathode afforded an onset potential of ~0.3 V vs. the reversible hydrogen electrode (RHE) in alkaline solution (1 M KOH). The stability of the Ni/Ti/p-Si photocathode showed a 100 mV decay over 12 h in KOH, but the stability was significantly improved when the photocathode was operated in potassium borate buffer solution (pH ≈ 9.5). The electrode surface was found to remain intact after 12 h of continuous operation at a constant current density of 10 mA/cm 2 in potassium borate buffer, suggesting that Ni affords good protection of Si based photocathodes in borate buffers.

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“…TiO 2 implanted with V, Mn, Ni and Fe ions also showed optical absorption efficiently red shifted to visible light region and exhibited excellent photocatalytic activity under visible light irradiation [19e22]. Some successes have been achieved by ion implantation to activate wide band gap semiconductors like TiO 2 in visible light region, however, there is still rare report on ions implanted ZnO nanorod arrays (NRs) for PEC water splitting under visible light [23].…”

Section: Introductionmentioning

confidence: 99%