Active Matrix OTFT Display With Anodized Gate Dielectric

Goettling, Silke; Diehm, Bastian; Fruehauf, Norbert

doi:10.1109/jdt.2008.921903

Cited by 24 publications

(16 citation statements)

References 8 publications

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“…This behaviour is generally described by the quadratic dependence of I DS(sat) on V G in the form [39]: The plot of I DS(sat) versus V G at V DS = −40 V in figure 5 shows the linear fit of experimental data to equation (4). Values of saturated mobility µ sat and the threshold voltage V T were estimated from the slope and intercept on the abscissa, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…This has been driven by scientific interest [1,2] and the potential applications of OFETs in new technologies such as flexible displays [3,4], logic circuits [5][6][7], radio frequency identification (RFID) tags [8,9], electronic paper [10,11] and sensing [12][13][14]. Organic compound-based devices offer interesting advantages over their inorganic counterparts in terms of their cost-effective deposition using low-energy vapour and solution phase methods that are suitable for large-area coverage on both solid and flexible substrates [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Chaure

Cammidge

Chambrier

et al. 2011

Science and Technology of Advanced Materials

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Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc 6 ) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO 2 ) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4 × 10 −2 cm 2 V −1 s −1 and 10 6 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to −2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Chaure

Cammidge

Chambrier

et al. 2011

Science and Technology of Advanced Materials

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show abstract

“…Organic electronics has been in the focus of intensive 47 research due to their possible application in large area 48 and flexible display media [1]. Often the device perfor-49 mance is limited by the contact resistance, R C , in particular 50 for short channel transistors [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Structural ordering versus energy band alignment: Effects of self-assembled monolayers on the metal/semiconductor interfaces of small molecule organic thin-film transistors

Risteska¹,

Steudel²,

Nakamura³

et al. 2014

Organic Electronics

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“…It has high dielectric constants (7.5-9), very large energy band gaps (8.7 eV), and can be prepared on many kinds of substrates at low temperature which is necessary for flexible electronics. Some papers reported organic devices with Al 2 O 3 films as gate dielectric layers [15,16]. However, most of the Al 2 O 3 films are fabricated by local oxide of aluminum metal film.…”

Section: Introductionmentioning

confidence: 99%

Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer

Shang

Chen

et al. 2010

Sci. China Technol. Sci.

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Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/cm 2 and leakage current of 1 nA/cm 2 at 1 MV/cm. The devices and circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material. Transistors, inverters, and ring oscillators with operating voltage lower than 5 V were obtained. The mobility of organic field-effect transistors was extracted to be 0.16 cm 2 /Vs in saturation range, the threshold voltage is 0.3 V, and the on/off current ratio is larger than 10 5 . The gain of inverters is estimated to be 12 at −5 V supply voltage, and the propagation delay is 0.25 ms per stage in 5-stage ring oscillators. OFET, low voltage, atomic layer deposition, Al 2 O 3 thin film, high-k dielectric Citation: Shang L W, Ji Z Y, Chen Y P, et al. Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer. Sci China Tech Sci, 2011, 54: 95−98,

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Active Matrix OTFT Display With Anodized Gate Dielectric

Cited by 24 publications

References 8 publications

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Structural ordering versus energy band alignment: Effects of self-assembled monolayers on the metal/semiconductor interfaces of small molecule organic thin-film transistors

Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer

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