Active mode locking of a diode laser by a resonant tunneling diode

Grumann, E.; Golub, J. E.; Matusovsky, M.; Rosenbluh, M.

doi:10.1063/1.111358

Cited by 1 publication

(1 citation statement)

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“…Practical implementations of proposed analog, 1 binary 2,3 or multiple-value 4-6 logic circuits will use RTDs that are operating in the scattering-dominated regime. It is possible that RTDs in this regime will also be used for other applications, such as millimeter-wave oscillators, 7 active mode locking for lasers, 8 and frequency multiplication. 9 Therefore, it is important to have an accurate dynamic model for scattering-dominated transport.…”

Section: Introductionmentioning

confidence: 98%

Comparison of a rate-equation model with experiment for the resonant tunneling diode in the scattering-dominated regime

Mattia

McWhorter

Aggarwal

et al. 1998

Journal of Applied Physics

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Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-barrier resonant tunneling diodes J. Appl. Phys. 111, 124310 (2012) Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates A quasistatic rate-equation model for the resonant tunneling diode ͑RTD͒ is presented. In this model, the RTD is divided into three regions, each assumed in quasithermal equilibrium. The electron transfer between states in adjacent regions, assumed to be by elastic tunneling, is then proportional to the probability that the initial state is occupied and the final state is empty. Using this approach, we derive a small-signal equivalent circuit. The model parameters may be either calculated or measured in a fairly straightforward manner, as is demonstrated for an In 0.53 Ga 0.47 As/AlAs RTD. We find that the dc characteristic and ac behavior up to 4 GHz are modeled well; we also find that the measured and calculated parameters agree to approximately a factor of 2 except in the vicinity of the current valley. We show that this approach is accurate enough to provide insight into the operation of the device, yields results that are simple enough to be suitable for ac circuit simulation, and should be valid as long as the frequency of the small-signal excitation is much less than the scattering rate.

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Section: Introductionmentioning

confidence: 98%