2005
DOI: 10.1016/j.ultramic.2005.03.006
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Active pixel sensor array as a detector for electron microscopy

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Cited by 127 publications
(91 citation statements)
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“…The high sensitivity feature of the DDD was not emphasized in this paper, but it would make DDD suitable for many low-dose imaging applications such as cryo-EM and cryo-electron tomography (Milazzo, et al, 2005.…”
Section: Discussionmentioning
confidence: 99%
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“…The high sensitivity feature of the DDD was not emphasized in this paper, but it would make DDD suitable for many low-dose imaging applications such as cryo-EM and cryo-electron tomography (Milazzo, et al, 2005.…”
Section: Discussionmentioning
confidence: 99%
“…In the recent years, we have developed a custom CMOS detector, based on the Active Pixel Sensor technology (Milazzo, et al, 2005, Xuong, et al, 2004). The prototype Direct Detection Device (DDD) with 512 x 550 pixels and 5 μm pixel pitch was extensively tested and proven to be radiation tolerant for an accumulated dose of >3.3 x 10 6 electrons/pixel, enough for several months of low-dose image acquisition .…”
Section: Introductionmentioning
confidence: 99%
“…The radiation levels for the inner layers of ATLAS, CMS and LHCb upgrades with neutron equivalent fluences beyond 10 16 n cm −2 , or an ionising dose of 1 GRad, significantly degrade traditional sensors of several hundreds µm thickness and require novel approaches. In the case of ALICE, with doses of few 10 13 n cm −2 and ∼700 kRad, the limitation comes from the safe operation of LHC.…”
Section: Radiation Hardnessmentioning
confidence: 99%
“…In TEM, replacing phosphorcoupled CCDs with direct detection on CMOS sensor is the latest trend in imaging [10,44,11], to decrease the PSF and enhance the detection quantum efficiency and imaging contrast ratio. Multiple scattering in the sensor is a major limitation, since the typical electron energy is in the range 60 -300 keV.…”
Section: Sensor Thicknessmentioning
confidence: 99%
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