“…In this sensor, each pixel uses a single programmable MoS 2 phototransistor. It shows a substantial reduction in footprint of 900 pixels in ∼0.09 cm 2 and energy consumption of fJ per pixel in 100 s. Furthermore, it exhibits a high dynamic range of ∼80 dB and in-sensor de-noising capabilities, showing the potential application in future high-performance active pixel sensors [ 168 ]. Fig.…”
Section: Applications Of Mos
2
In Integration Circ...mentioning
confidence: 99%
“…e The infrared image obtained from linear array imaging (16 × 60 pixels) by using GaSe/GaSb heterostructures [ 170 ], Copyright 2017, WILEY–VCH. f–h ) The monolayer MoS 2 phototransistor-based active pixel sensor array [ 168 ], Copyright 2022, Springer Nature …”
Section: Applications Of Mos
2
In Integration Circ...mentioning
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal–organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.
“…In this sensor, each pixel uses a single programmable MoS 2 phototransistor. It shows a substantial reduction in footprint of 900 pixels in ∼0.09 cm 2 and energy consumption of fJ per pixel in 100 s. Furthermore, it exhibits a high dynamic range of ∼80 dB and in-sensor de-noising capabilities, showing the potential application in future high-performance active pixel sensors [ 168 ]. Fig.…”
Section: Applications Of Mos
2
In Integration Circ...mentioning
confidence: 99%
“…e The infrared image obtained from linear array imaging (16 × 60 pixels) by using GaSe/GaSb heterostructures [ 170 ], Copyright 2017, WILEY–VCH. f–h ) The monolayer MoS 2 phototransistor-based active pixel sensor array [ 168 ], Copyright 2022, Springer Nature …”
Section: Applications Of Mos
2
In Integration Circ...mentioning
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal–organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.
“…In this demonstration, monolayer MoS2 was grown on an epi-ready 2" c-sapphire substrate using metal organic chemical vapor deposition (MOCVD) technique. The growth parameters are outlined in the Methods section and in our previous work [28]. The material quality was then assessed using material characterization techniques such as Raman spectroscopy, This is further evidenced by the atomic force microscopy (AFM), given in Fig.…”
Section: Growth and Characterization Of Monolayer Mos2mentioning
Three-dimensional (3D) integration is an emerging technology that is revolutionizing the semiconductor industry. On one hand, it enables the packaging of more devices per unit volume, also referred to as “More Moore”, while on the other hand, it empowers multifunctionality, also known as “More than Moore”, both of which are key toward the development of low-cost, energy-efficient, and high-performance smart electronic systems. While silicon-based 3D integrated circuits (ICs) are already commercially available, there is limited effort on 3D integration of emerging nanomaterials such as two-dimensional (2D) materials despite their novel functionalities that may benefit many applications. Here we demonstrate monolithic 3D integration of a large volume (in excess of 600 transistors in each tier) of aggressively scaled field effect transistors (FETs) based on monolayer MoS2 at low-thermal budget (with processing temperature < 185 °C). We also realize 3D circuits and demonstrate multifunctional capabilities including sensing, memory storage, as well as logic gates in any tier across the 3D stack. We believe that our demonstration will pave the path for more sophisticated, highly dense, and functionally divergent ICs with a larger number of tiers integrated monolithically in the third dimension.
“…Because of their excellent electrical and optoelectronic properties, two-dimensional (2D)-layered materials, such as semiconducting transition-metal dichalcogenides (TMDs), show great potential in diverse device applications, − including field-effect transistors (FETs), − photodetectors, nanocavity lasers, optical modulators, , sensors, and energy storage devices . To realize these applications, it is necessary to control their electrical and optical properties, both of which are highly dependent on the number of layers , and the surface doping. , For instance, TMDs from few-layer to bulk materials have indirect band gaps with weak luminescence, while monolayer (1L) TMDs exhibit direct band gaps with strong luminescence , and also possess other unique properties such as large second-order optical nonlinearities, strong spin-valley coupling, etc.…”
The electrical properties of transition-metal dichalcogenides
(TMDs),
such as MoS2, are highly dependent on carrier doping and
layer thickness. The ability to selectively control these two critical
characteristics is of great importance in order to develop TMD-based
multifunctional nanoelectronic device applications, which remains
challenging. Here, we report a strategy for controllable surface modification
and layer thinning of MoS2 via ultraviolet (UV)-light irradiation
in a silver ionic (Ag+) solution environment. The results
show that, by adjustment of the UV irradiation time, nanostructured
Ag ultrathin films (∼2.9 nm) are uniformly deposited on monolayer
MoS2 and can lead to a controllable p-type doping effect,
while the thickness of MoS2 from few-layer to thick-layer
could be thinned to the atomic monolayer limit. Both Ag nanostructure
deposition and layer thinning have been evidenced to initiate from
the edges of MoS2, independent of the edge type, thus revealing
a unique UV-light-assisted defect-induced surface modification and
layer-thinning mechanism. Overall, this study provides a simple methodology
for the selective control of doping and layer thickness in TMDs, paving
the way for developing multifunctional nanoelectronics and integrated
optoelectronics.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
