Active Temperature Compensation for MEMS Capacitive Sensor

Abstract

Temperature variations are one of the most crucial factors that need to be compensated for in MEMS sensors. Many traditional methodologies require an additional circuit to compensate for temperature. This work describes a new active temperature compensation method for MEMS capacitive strain sensors without additional circuits. The proposed method is based on a complement 2-D capacitive structure design. It consumes zero-power, which is essential toward the realization of a lowpower temperature-compensated sensor in battery-powered or energyharvesting applications. The gauge factor of the developed MEMS capacitive strain sensor is 7. The best result showing a capacitance variation of 1 ppm/ o C compared with 13 ppm/ o C on conventional design.

Temperature Compensation of Wind Tunnel Balance Signal Detection System Based on IGWO-ELM

“…The compensation of the balance signal detection system for temperature can be achieved through hardware compensation or software compensation methods. Hardware compensation involves designing the circuit to eliminate temperature coefficients [ 6 ]. For instance, Chu et al [ 7 ] adopted double thermocouples to measure the airflow temperature and proposed a time domain compensation method to compensate for the airflow temperature measurement results.…”

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