Active Temperature compensation for MEMS capacitive sensor

Abstract

Temperature variation is one of the most crucial factors that need to be cancelled in MEMS sensors. Many traditional methodologies require an additional circuit to compensate for temperature. This work describes a new active temperature compensation method for MEMS capacitive strain sensor without any additional circuit. The proposed method is based on a complement 2-D capacitive structure design. It consumes zero-power, which is essential toward the realization of a low-power temperature-compensated sensor in battery-powered or energy-harvesting applications<br>

Highly Sensitive Temperature Sensor Based on Coupled-Beam AlN-on-Si MEMS Resonators Operating in Out-of-Plane Flexural Vibration Modes

“…Operation of MEMS devices hinges on energy conversion between different physical domains such as electrical and mechanical domains. According to the transduction mechanism, resonant MEMS sensors can be broadly divided into several types including capacitive [3], thermal/ piezoresistive [4], and piezoelectric [5]. Piezoelectric resonant sensors have the advantages of large energy transduction efficiency, low power consumption, favorable frequency scaling characteristic, and quasidigital output [2].…”