Active-Tuning and Polarization-Independent Absorber and Sensor in the Infrared Region Based on the Phase Change Material of Ge2Sb2Te5 (GST)

Guo, Zhongyi; Yang, Xiao; Shen, Fei; Zhou, Qingfeng; Gao, Jun; Guo, Kai

doi:10.1038/s41598-018-30550-2

Cited by 72 publications

(33 citation statements)

References 39 publications

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“…Another limitation is that conventional metasurfaces-based devices are not cost-effective since once a device is made, it only works for a certain functionality and wavelength. Therefore, there has been considerable interest recently in developing tunable all-dielectric metasurfaces for light modulation applications by using the phase change materials [94][95][96][97] instead of metallic elements used in earlier works.…”

Section: Meta-surfacesmentioning

confidence: 99%

A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

2019

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Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due to their high write and read speeds, reversible phase transition, high degree of scalability, low power consumption, good data retention, and multi-level storage capability. However, GST-based PCMs have shown recent promise in other domains, such as in spatial light modulation, beam steering, and neuromorphic computing. This paper reviews the progress in GST-based PCMs and methods for improving the performance within the context of new applications that have come to light in recent years.

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Section: Meta-surfacesmentioning

confidence: 99%

A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

2019

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“…The design specifications vary for different applications including single-, dual-, and multi-band as well as broadband frequency performance. The significant advantages of the proposed absorber structure lie in polarization insensitivity, wide incident angle, near-perfect absorption, large bandwidth, and single to multi-band operation [7]. There are several drawbacks to conventional absorbers.…”

Section: Introductionmentioning

confidence: 99%

A Broadband Polarized Metamaterial Absorber Driven by Strong Insensitivity and Proximity Effects

2021

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Artificial electromagnetic metamaterial produces exotic resonance, unusual characteristics not found in nature, but engineers can inherit the characteristics by controlling and manipulating their architecture. The design and realization of dual-band, polarization, and incident angle insensitive metamaterial absorber (MA) is proposed. By manipulating shape and structure, periodic pattern, and dielectric layer thickness a significant way to realize high absorption has been investigated. In order to achieve high absorption a new shape of an octagonal ring (OR), cross-wires (CWs), and cut-off circle (CC) artificial structure have been carefully chosen. The special characteristics of this structure produce a dual resonance and its bandwidth increases compare to the classical absorber. The proposed artificial structure operation suits the Ku-band application, but possible to enhance in C-band. The numerical and experimental results show a dual-band 99.8% at 12.2 GHz and 99.9% at 15.5 GHz resonance is an excellent agreement in theory and numerical analysis. The effects of the constitutive property parameters: dielectric constant (ɛ), magnetic permeability (µ), and negative refractive index (n) are also investigated. The investigation of symmetric design structure shows the polarization-insensitivity and high absorption found even in changing the incident angle. Numerical and experimental results ensured the destructive interference of multiple penetrations which are responsible for the near-unity absorption. An excellent agreement in the absorptivity rates that touches near perfection which is prominent for solar cells, detection, and imaging applications.

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“…Use of phase-change materials (PCMs) in electrical and optical systems has introduced widespread applications, including uses in optical data storage [1][2][3] and photonic nanodevices [4,5]. Attributes of PCMs include nonvolatile phase changes, rapid switching, and quick responses to stimuli, reasonable data retention, and long-term stability [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics

Raeis‐Hosseini

Rho

2019

Applied Sciences

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Integration of metamaterial and nonvolatile memory devices with tunable characteristics is an enthusing area of research. Designing a unique nanoscale prototype to achieve a metasurface with reliable resistive switching properties is an elusive goal. We demonstrate a method to exploit the advantages of a phase-change material (PCM) as a metamaterial light absorber and a nanoscale data storage device. We designed and simulated a metamaterial perfect absorber (MPA) that can be reconfigured by adjusting the visible light properties of a chalcogenide-based PCM. The suggested perfect absorber is based on a Ge2Sb2Te5 (GST) film, and is tuned between two distinct states by heat treatment. Furthermore, we fabricated and characterized a resistive switching memory (ReRAM) device with the same features. The MPA/ReRAM device with a conventional metal/dielectric/metal structure (Ag/GST/Al2O3/Pt) consisted of arrays of Ag squares patterned on a GST thin film and an alumina-coated Pt mirror on a glass substrate. Based on the numerical data, amorphous GST showed perfect absorbance in the visible spectrum, whereas, crystalline GST showed broadband perfect absorbance. The fabricated ReRAM device exhibited uniform, bidirectional, and programmable memory characteristics with a high ON/OFF ratio for nonvolatile memory applications. The elucidated origin of the bipolar resistive switching behavior is assigned to the formation and rupture of conductive filaments.

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Active-Tuning and Polarization-Independent Absorber and Sensor in the Infrared Region Based on the Phase Change Material of Ge2Sb2Te5 (GST)

Cited by 72 publications

References 39 publications

A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

A Broadband Polarized Metamaterial Absorber Driven by Strong Insensitivity and Proximity Effects

Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics

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