Active tuning of the 
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-tensor in InGaAs/GaAs quantum dots via strain

Tholen, H. M. G. A.; Wildmann, Johannes S.; Rastelli, Armando; Trotta, Rinaldo; Pryor, Craig; Zallo, Eugenio; Schmidt, Oliver G.; Koenraad, P. M.; Silov, A. Yu.

doi:10.1103/physrevb.99.195305

Cited by 13 publications

(14 citation statements)

References 40 publications

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“…Such complex applications require a detailed knowledge about the response of an excited state in the QD to an external magnetic field, which is described by its g-factor and the diamagnetic coefficient. Furthermore, an individual engineering of the contribution of electrons (e − ) and holes (h + ) within a complex to the overall g-factor is desired [18][19][20] . Hence, for engineering the magnetic properties of a QD precise measurements are crucial.…”

Section: Introductionmentioning

confidence: 99%

Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots

et al. 2019

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We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization-and magnetic field-dependent µ-photoluminescence measurements, which allow us to identify different excited states of the quantum dot system. Besides that, we present a comprehensive analysis of g-factors and diamagnetic coefficients of charged and neutral excitonic states in Voigt and Faraday configuration. Supported by theoretical calculations by the Configuration interaction method, we show that the widely used single-particle Zeeman Hamiltonian cannot be used to extract reliable values of the g-factors of the constituent particles from excitonic transition measurements. arXiv:1909.04906v1 [cond-mat.mes-hall]

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Section: Introductionmentioning

confidence: 99%

Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots

et al. 2019

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“…One of the key quantities for the control protocols of localized carrier spins is the g factor, which is the coefficient connecting its magnetic dipole moment with the spin degrees of freedom. In general, the effective g factor in a semiconductor nanostructure deviates from the value dominantly determined by the material composition due to a wide variety of the modulations: for example, the spatial confinement in the nanostructures, the effect of strain-induced valence band mixing (VBM), and the penetration of the carrier wavefunction into the barrier material [6][7][8][9].…”

mentioning

confidence: 99%

Sign identification of electron and hole out-of-plane g factors by utilizing nuclear spin switch in single quantum nanostructures

Matsusaki,

Kaji,

Yamamoto

et al. 2018

Preprint

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The electron and hole g factors are the key quantities for the spin manipulations in semiconductor quantum nanostructures. However, for the individual nanostructures, the separate determination including the signs of those g factors is difficult by using some methods adopted conventionally in bulks and quantum wells. We report a convenient optical method for the sign identification of out-of-plane g factors in the individual quantum nanostructures, which utilizes the optically-induced nuclear spin switch. The method is demonstrated in typical single self-assembled In 0.75 Al 0.25 As/Al 0.3 Ga 0.7 As quantum dots and InAs/GaAs quantum rings, where the g factors with the opposite sign for electron and the same sign for hole are proved.

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“…This study represents an exciting new direction, where the application of easily achievable pressures could enable the use of various semiconductor NCs as emitters in next‐generation integrated photonic circuits. This result has already spurred the further study of NCs for this application [143–145] …”

Section: Discussionmentioning

confidence: 98%

Tailoring Optical Properties of Luminescent Semiconducting Nanocrystals through Hydrostatic, Anisotropic Static, and Dynamic Pressures

et al. 2021

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Studies on the hydrostatic-pressure-dependent optical properties of av ariety of metal-halide perovskites will be discussed below.M etal-halide perovskites (MHPs), which have the general formula ABX 3 [A = Cs + ,C H 3 NH 3 + (methylammonium, MA), HC(NH 3 ) 2 2+ (formamidinium, FA), etc.; B = Pb 2+ ,S n 2+ ,e tc.; and X = Cl, Br, or I],h ave been widely studied because of their tremendous potential for use in many optoelectronic applications,i ncluding solar cells, [18][19][20][21] LEDs, [22][23][24][25][26] photodetectors, [27,28] and scintillators. [29] Thee xceptional optical performance of MHPs can be attributed to their strong optical absorption, [30,31] low exciton binding energy, [32] long exciton diffusion lengths, [33] high carrier mobility, [34,35] defect tolerance, [36][37][38] and facile synthesis. [35,39] Lead-halide perovskites (LHPs) are ac lass of MHPs that have shown great promise as aresult of the abovementioned unique properties and their relatively high stability. [40] LHP NCs are of particular interest because of their extremely bright and narrow photoluminescence (PL) band and the ease of tuning their emission wavelengths by tuning both the halide composition and the size of the NCs. [41][42][43][44][45][46][47] Thef ollowing subsections will outline how the application of hydrostatic pressure alters the optical properties of avariety of LHP NCs. All-Inorganic CsPbX 3 PerovskitesCs + is acommonly used A-site cation in all-inorganic LHP NCs because its large ionic radius (R A = 1.88 )a llows the formation of astable perovskite phase,asdetermined by the Goldschmidt tolerance factor. [48] CsPbBr 3 NCs have been shown to possess an ear-unity photoluminescence quantum yield (PLQY), narrow (i.e.8 6meV) full width at half max (FWHM), and superior stability to both CsPbI 3 and CsPbCl 3 . [49,50] When subjected to hydrostatic pressures up to about 1.4 GPa, the PL spectra of CsPbBr 3 NCs was redshifted, widened, and decreased in intensity until ca. 1.3 GPa, at which pressure the PL was sharply quenched (Figure 1). [51] Thea uthors attributed the discontinuity to an isostructural phase transformation of the Pbnm space group. [51] Firstprinciple calculations suggested that the shift in the emission and the phase change were due to pressure-induced variations of the BrÀPb bond lengths and shrinkage of the Pb-Br-Pb bond angles within the lead bromide octahedra. [51] Interest-Angewandte Chemie Kurzaufsätze 9858 www.angewandte.de

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Active tuning of the g -tensor in InGaAs/GaAs quantum dots via strain

Cited by 13 publications

References 40 publications

Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots

Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots

Sign identification of electron and hole out-of-plane g factors by utilizing nuclear spin switch in single quantum nanostructures

Tailoring Optical Properties of Luminescent Semiconducting Nanocrystals through Hydrostatic, Anisotropic Static, and Dynamic Pressures

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