Active Voltage Control of IGBTs for High Power Applications

Palmer, P.R.; Rajamani, Haile-Selassie

doi:10.1109/tpel.2004.830078

Cited by 94 publications

(40 citation statements)

References 11 publications

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“…Voltage shape generator for the gate of the IGBTs [12], Introducing intermediate voltage levels to the gate of IGBTs [21], and closed-loop control of the collector-to-emitter voltage of IGBTs by varying the gate voltage [22], are some examples of the gate-voltage-control AGD techniques. However, the dv/dt is not adjustable, and controllability over the di/dt is limited using presented approaches in [20]- [22].…”

Section: B State Of the Art Work On Switching Transition Controlmentioning

confidence: 99%

Closed-loop control of switching transition of SiC MOSFETs

Riazmontazer

Rahnamaee

Mojab

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper presents a novel closed-loop active-gatecontrol (AGC) circuit for high-voltage SiC MOSFETs, used in the high-voltage, high-frequency and high-power-density applications. The proposed controller independently adjusts the switching di/dt and dv/dt by closed-loop control of the gate current and enables one to reach optimal performance in terms of loss, device stress, and EMI. The di/dt is adjusted to control the overvoltage stress and peak reverse recovery current while the dv/dt is adjusted to control the common mode (CM) noise and switching loss. The dv/dt is the primary source of the common mode noise in power electronics converters. Dynamic control of switching dv/dt has been somewhat overlooked in the state-of-the art works based on Si based power semiconductor devices (PSDs), and maximum achievable dv/dt is used to decrease the switching loss. However, the magnitude of generated dv/dt in the high-voltage SiC-based applications is appreciable because of the exceptionally higher switching speed of the SiC MOSFETs as compared to Si IGBTs. In contrast to other works, the proposed controller dynamically and independently controls the turn-off di/dt and dv/dt of a SiC MOSFET using closed-loop control of the gate current. Independent control of turn-off di/dt and dv/dt is achieved using a delay compensation circuit. This circuit compensates the total delay in the feedback loop and predicts the onset of transition between dv/dt and di/dt control regions. The proposed control circuit operation and advantages are presented and verified by experimental results.

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Section: B State Of the Art Work On Switching Transition Controlmentioning

confidence: 99%

Closed-loop control of switching transition of SiC MOSFETs

Riazmontazer

Rahnamaee

Mojab

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…In order to study the converter current control system, the IGBT operation in linear mode has to be modelled. An IGBT model [4,5,6], where the parasitic inductances are neglected, depicted in Figure 3, has been considered. Taking into account these characteristics, a specific driver that linearizes the IGBT gain and dynamical behaviour by operating in voltage closed-loop has been developed and implemented.…”

Section: Igbt Model and Closed-loop Drivermentioning

confidence: 99%

Control of high power IGBT modules in the active region for fast pulsed power converters

Cravero

Magallanes

Retegui

et al. 2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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At CERN, fast pulsed power converters are used to supply trapezoidal current in different magnet loads. These converters perform output current regulation by using a high power IGBT module in its ohmic region. This paper presents a new strategy for pulsed current control applications using a specifically designed IGBT driver. AbstractAt CERN, fast pulsed power converters are used to supply trapezoidal current in different magnet loads. These converters perform output current regulation by using a high power IGBT module in its ohmic region. This paper presents a new strategy for pulsed current control applications using a specifically designed IGBT driver.

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“…AVC initially proposed by Palmer and Githiari as an intelligent gate drive circuit has been proved to be effective in controlling IGBTs and series connected strings IGBTs, particularly with regards to switching transients [16][17][18][19][20][21]. In this paper, AVC is shown to control IGBT switching transitions following a Gaussian reference so that EMI can be greatly reduced and accurately predicted.…”

Section: Introductionmentioning

confidence: 99%

Shaping pulse transitions by active voltage control for reduced EMI generation

Yang

Palmer

2013

2013 IEEE Energy Conversion Congress and Exposition

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High-performance power switching devices (IGBT/MOSFET) realise high-performance power converters. Unfortunately, with a high switching speed of the IGBT or MOSFET -freewheel diode chopper cell, the circuit has intrinsic sources of high-level EMI. Therefore, costly EMI filters or shielding are normally demanded on the load and supply side. Although an "S-shaped" voltage transient with a high order of derivation eliminates the discontinuity and could suppress HF spectrum of EMI emissions, a practical control scheme is still under development. In this paper, Active Voltage Control (AVC) is applied to successfully define IGBT switching dynamics with a smoothed Gaussian waveform so a reduced EMI can be achieved without extra EMI suppression devices.

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Active Voltage Control of IGBTs for High Power Applications

Cited by 94 publications

References 11 publications

Closed-loop control of switching transition of SiC MOSFETs

Closed-loop control of switching transition of SiC MOSFETs

Control of high power IGBT modules in the active region for fast pulsed power converters

Shaping pulse transitions by active voltage control for reduced EMI generation

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