Actively controlled anode auxiliary gate super-junction insulated gate bipolar transistor with extremely low Eoff

Abstract

The Super-junction Insulated Gate Bipolar Transistor (SJ-IGBT), due to its unipolar/bipolar mixed conduction mechanism, the approaches to improve its $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ are not exactly the same as non-SJ IGBTs. For the pursue of extremely low $\textit{E}_\textbf{off}$, a planar auxiliary anode gate SJ-IGBT (AAG-SJ-IGBT) is proposed based on 650V SJ-IGBT to realize a unipolar turn-off as SJ-MOSFETs accompanied with fast switching and extremely low $\textit{E}_\textbf{off}$. The planar auxiliary anode gate provides similar effects but better feasibility than conventional trench ones. Sentaurus TCAD simulation results of the proposed AAG-SJ-IGBT indicates the -69\% smaller $\textit{t}_\textbf{doff}$ and -54\% lower $\textit{E}_\textbf{off}$ than the FP-SJ-IGBT, and its $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ is significantly optimized from cathode improved SJ-IGBTs. The analysis of carrier and current density reveals the static and dynamic characteristics of the AAG-SJ-IGBT and the principle for excellent $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ Trade-off.

Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure

“…Fortunately, in recent years, many novel RC-IGBT structures have been proposed to suppress the snapback effect [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]. As detailed in [7], the simple collector shorting layout design, which provides a gradual decrease in the width of collector P+ from the center of the chip towards the outer edges while keeping a constant width of collector N+, can be used with RC-IGBT to eliminate the snapback effect.…”

“…In [11,12], the high-resistance buffer layer was suggested to suppress the snapback effect. An actively controllable collector trench gate is employed in RC-IGBT, but it requires an additional complicated gate drive [13]. Some RC-IGBTs with collector trench are also proposed without additional control [14,15].…”