Actual origin and precise control of asymmetrical hysteresis in an individual CH₃NH₃PbI₃ micro/nanowire for optical memory and logic operation

Abstract

Actual origin and precise control of asymmetrical hysteresis in an individual CH3NH3PbI3 micro/nanowire for optical memory and logic operation Runna Gou,a Zhiyong Ouyang,b Changsen Xu,b Song He,a Wei Zeng,a Shouduan...

Memristor-based neural networks: a bridge from device to artificial intelligence

“…At present, the major route to developing memristive materials is to improve material synthesis methods and broaden the material systems. [176][177][178][179][180] This is mainly reflected in optimizing the preparation and growth of materials. On the other hand, it is necessary to continuously improve the interface effect of materials and conduct more in-depth research on the special properties of materials in different dimensions.…”

Self-Powered Photodetector Based on Ag/CH3NH3PbI3/C Asymmetric Dual-Terminal Device

“…In this study, CH 3 NH 3 PbI 3 micro/nanowires were synthesized by a rapid liquid–solid growth from supersaturated solution, as described in detail in our previous publication . After synthesis, individual micro/nanowires were transferred onto a treated Kapton insulating substrate.…”

“…In this study, CH 3 NH 3 PbI 3 micro/nanowires were synthesized by a rapid liquid−solid growth from supersaturated solution, as described in detail in our previous publication. 50 After synthesis, individual micro/nanowires were transferred onto a treated Kapton insulating substrate. To fabricate an asymmetric double-terminal device, semidry Ag and C pastes were fixed on two ends of a single micro/nanowire, respectively, and then copper wires were connected to the two electrodes.…”

Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers

“…This phenomenon was ascribed to the presence of AgI x formed at the interfaces of the two Ag/MAPbI 3 layers, consequently engendering a tunnel barrier. 47,48 Nevertheless, replicating this phenomenon within MAPbI 3 thin films posed a significant challenge. We attempted various approaches to modulate the tunneling barrier at the interface of perovskite thin film devices (as illustrated in Fig.…”