Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications

Denninghoff, D.; Arkun, E.; Moon, J.-S.; Tran, H.; Corrion, A.; Siddiqi, G.; Fanning, D.; Fireman, M.; Tai, J.; Wong, J.; Grabar, B.; Dao, C.; Milosavljevic, I.; Tran, R.; Getter, A.; Clapper, A.; Dadafshar, S.; Georgieva, J.; Moyer, H.; Miller, N.; Elliott, M.; Gilbert, R.

doi:10.1109/bcicts54660.2023.10310972

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2024

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Cited by 3 publications

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K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm⁻¹ Extrinsic Transconductance

Yazdani,

Beleniotis,

Brunner

et al. 2024

Physica Status Solidi (a)

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In this study, the impacts of fabrication technology and epitaxial layer design on the transconductance (gm) of radio frequency AlGaN/GaN high‐electron‐mobility transistors (HEMTs) are examined. Optimization of the SiNx passivation and AlGaN barrier design of 150 nm gate HEMTs enhances the extrinsic (at Vds = 10 V) and intrinsic (at Vds = 15 V) transconductance from ≈0.47/0.65 to ≈0.62/1.1 S mm−1. Notably, an extrinsic gm of 0.70 S mm−1 at Vds = 5 V is achieved, setting a new benchmark for the extrinsic transconductance of AlGaN/GaN HEMTs designed for the K/Ka frequency range with a breakdown voltage exceeding 100 V.

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K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm⁻¹ Extrinsic Transconductance

Yazdani,

Beleniotis,

Brunner

et al. 2024

Physica Status Solidi (a)

View full text Add to dashboard Cite

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Enabling Monolithic Integration of an Advanced 7-Layer Silicon Back-End-of-Line (BEOL) on 40nm GaN for Next Generation MMICs

Roderick,

Siddiqi,

Denninghoff

et al. 2024

2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

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Sub-THz Integrated Circuits: Challenges and Opportunities

Banerjee

2024

2024 IEEE 67th International Midwest Symposium on Circuits and Systems (MWSCAS)

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Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications

Cited by 3 publications

References 39 publications

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm⁻¹ Extrinsic Transconductance

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm⁻¹ Extrinsic Transconductance

Enabling Monolithic Integration of an Advanced 7-Layer Silicon Back-End-of-Line (BEOL) on 40nm GaN for Next Generation MMICs

Sub-THz Integrated Circuits: Challenges and Opportunities

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Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications

Cited by 3 publications

References 39 publications

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm−1 Extrinsic Transconductance

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm−1 Extrinsic Transconductance

Enabling Monolithic Integration of an Advanced 7-Layer Silicon Back-End-of-Line (BEOL) on 40nm GaN for Next Generation MMICs

Sub-THz Integrated Circuits: Challenges and Opportunities

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Product

Resources

About

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm⁻¹ Extrinsic Transconductance

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm⁻¹ Extrinsic Transconductance