Adaptive membrane masks

Zhuang, Xin; Conkerton, D.; Lal, Anitesh; Jiang, Liudi; Feldman, Moran; O’Reilly, Tim; Smith, Henry I.

doi:10.1116/1.1625959

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…[2][3][4][5] To minimize in-plane heat flow the masks should be thin membranes, such as those already used for x-ray, e-beam, and ion beam lithography. [2][3][4][5] To minimize in-plane heat flow the masks should be thin membranes, such as those already used for x-ray, e-beam, and ion beam lithography.…”

Section: Introductionmentioning

confidence: 99%

Temperature distributions to correct distortions in membrane masks

Jiang

Feldman

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Adaptive membrane masks have recently been reported for the correction of distortions in integrated circuit masks and wafers. In these masks radiative heating is selectively applied to portions of the mask membranes. By controlling local heating, dimensional changes are made to the membrane which correct overlay errors between the mask and the wafer. The method is applicable to almost all of the next generation lithographies, and can correct distortions arising from the mask, the wafer, or the exposure tool. In previous work it was assumed that in-plane heat flow through the thin membranes was negligible, and that the local temperature rise was proportional to the heat input. The present work demonstrates that although there is substantial in-plane heat flow, its effects may be accounted for and a very wide range of temperature distributions may be generated on the membrane. These temperature distributions can then be used to correct almost arbitrary distortions.

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Section: Introductionmentioning

confidence: 99%

Temperature distributions to correct distortions in membrane masks

Jiang

Feldman

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Multifield sub-5 nm overlay in imprint lithography

Ajay

Cherala

Yin

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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One significant advantage of imprint lithography (IL) over photolithography is that the field size is not limited optically, and so, throughput can be very high (>100 cm2/s). But, in applications requiring precise (sub-5 nm) overlay, the field size is limited by the distortion (between template and wafer) to about the same field size (26 × 33 mm) as employed in current photolithographic tools for semiconductor integrated circuits. This reduces the throughput of current IL tools to less than that of current photolithographic tools. Here, the authors have, for the first time, created a multifield (dual and quad fields) nanoscale overlay capability by optimally combining (1) Precision mechanical actuators around the periphery of the fields which can correct for magnification and shear over the whole field, and (2) high resolution intrafield isotropic expansion and contraction using an array of local temperature control units. The authors have developed control algorithms for sub-5 nm overlay precision over up to four fields using thermomechanical simulations, and the authors have experimentally validated the approach. This research has the potential to significantly improve IL throughput without compromising nanoscale overlay.

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