Adaptive wind-evoked power devices for autonomous motor control applications

Sha, Wei E. I.; Hua, Qilin; Shi, Yuanhong; Wang, Jiangwen; Cui, Xiao; Dong, Zilong; Wang, Bingjun; Niu, Jianan; Hu, Weiguo

doi:10.1039/d2tc01933g

Cited by 2 publications

(2 citation statements)

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“…[ 20–22 ] Based on coupling effects of semiconductor characteristics and piezoelectric characteristics, the piezotronic effect can be observed in III‐nitrides, [ 23–25 ] and it opens a window to strain‐regulated nanowires, [ 26,27 ] LEDs, [ 28–30 ] and HEMTs, [ 31–33 ] especially in the artificial intelligence devices. [ 34,35 ]…”

Section: Introductionmentioning

confidence: 99%

“…[20][21][22] Based on coupling effects of semiconductor characteristics and piezoelectric characteristics, the piezotronic effect can be observed in III-nitrides, [23][24][25] and it opens a window to strain-regulated nanowires, [26,27] LEDs, [28][29][30] and HEMTs, [31][32][33] especially in the artificial intelligence devices. [34,35] Here, we present a bioinspired magnetosensory power device (MPD) that can demonstrate large output power control with the emulation of magnetoreception in nature. The MPD is based on a cantilever-structured AlGaN/AlN/GaN HEMT device integrated with a high magnetic film (Fe 90 Co 10 ) 78 Si 12 B 10 .…”

Section: Introductionmentioning

confidence: 99%

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Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics

Zhou

Hua

Sha

et al. 2023

Adv Elect Materials

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The advances in biological magnetoreception and microelectronics have promoted the vigorous development of interactive electronic devices capable of noncontact interaction and control via magnetic fields. Here, a magnetosensory power device (MPD) that integrates a magnetic film ((Fe90Co10)78Si12B10) unit into a cantilever‐structured AlGaN/GaN‐based high‐electron‐mobility‐transistor is presented. The MPD is capable to not only sense external magnetic field, but also control device output power with the emulation of magnetoreception. Specifically, the device can achieve significant control of output power density (18.04 to 18.94 W mm−2) quasi‐linearly with magnetic field stimuli (0–400 mT) at a gate bias of −5 V. In addition, the maximum output power density of the MPD can reach 85.8 W mm−2 when a gate bias of 1 V is applied. The simulation and experimental results show that MPD has excellent orientation and magnetic field sensing functions under 0–400 mT magnetic fields. With the intelligent capabilities of magnetic sense and output power control, such interactive electronic devices will have broad application prospects in the fields of artificial intelligence, advanced robotics, and human‐machine interfaces.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics

Zhou

Hua

Sha

et al. 2023

Adv Elect Materials

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Manufacture and applications of GaN-based piezotronic and piezo-phototronic devices

Niu,

Wang,

Sha

et al. 2024

Int. J. Extrem. Manuf.

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Driven by the urgent demands for information technology, energy, and intelligent industry， third-generation semiconductor GaN has emerged as a pivotal component in electronic and optoelectronic devices. Piezoelectric polarization is the most essential feature of GaN materials. GaN materials based on piezotronics/phototronics combine mechanical signals with electrical signals/optical signals to achieve multi-field coupling of device performance. Piezotronics regulates the carrier transport process in micro-nano devices, which has been proven to significantly improve the performance of devices (such as HEMTs and MicroLEDs) and brings many novel applications. This review examines GaN material properties and the theoretical foundations of piezotronics and phototronics. It also explores GaN device fabrication and integration processes to achieve state-of-the-art device performance. This review also analyzes the impact of introducing three-dimensional stress and regulatory forces on devices' electrical and optical output performance. Additionally, it discusses new applications of GaN devices in neural sensing, optoelectronic output, and energy harvesting. Finally, the potential of piezotronic-controlled GaN devices offers insights for future research and the development of multi-functional, diversified electronic devices.

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Adaptive wind-evoked power devices for autonomous motor control applications

Abstract: With the explosive development of artificial intelligence, power devices integrated with real-time sensing functions have attracted tremendous attention and will play an important role in intelligent control applications. In this...

Cited by 2 publications

References 36 publications

Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics

Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics

Manufacture and applications of GaN-based piezotronic and piezo-phototronic devices

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