2001
DOI: 10.1038/35106615
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addendum: An efficient room-temperature silicon-based light-emitting diode

Abstract: We acknowledge ®nancial support of the Deutsche Forschungsgemeinschaft and of Roche Diagnostics. P. Go Èttig and R. Ramachandran helped with biochemical analyses. We thank G. Bourenkov and H. Bartunik, and G. Leonard for help with synchrotron data collection at DESY BW6 (Hamburg) and ESRF ID14-4 (Grenoble), respectively.

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Cited by 8 publications
(3 citation statements)
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“…The peak (≈500 nm) and the peak (≈590 nm) in Figure f are therefore associated with the defects emissions in ZnO nanofilm . Due to the presence of high index atomic steps at the edge of Si micropillar (Figure f) and nanostructures at the heterojunction interface (Figure S1a,b, Supporting Information), the energy band gap of Si near the ZnO/Si pn junction is larger than that of bulk Si, which is related to the peak of 680 nm . The near‐infrared emission centered at around 780 nm comes from the Si microstructure such as the micropillar arrays and nanopits on the micropillar surface (Figure S1c,d, Supporting Information) .…”
mentioning
confidence: 94%
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“…The peak (≈500 nm) and the peak (≈590 nm) in Figure f are therefore associated with the defects emissions in ZnO nanofilm . Due to the presence of high index atomic steps at the edge of Si micropillar (Figure f) and nanostructures at the heterojunction interface (Figure S1a,b, Supporting Information), the energy band gap of Si near the ZnO/Si pn junction is larger than that of bulk Si, which is related to the peak of 680 nm . The near‐infrared emission centered at around 780 nm comes from the Si microstructure such as the micropillar arrays and nanopits on the micropillar surface (Figure S1c,d, Supporting Information) .…”
mentioning
confidence: 94%
“…The selected‐area electron diffraction (SAED) pattern of Si (inset of Figure e, left) confirms its single crystalline, while the SAED pattern of ZnO nanofilm (inset of Figure e, right) indicates the presence of different crystallographic directions. Figure f is the HRTEM image derived from the selected area marked in Figure e, revealing the existence of high index atomic steps at the interface, which leads to an increase in band gap energy at the edge …”
mentioning
confidence: 99%
“…Nanoimprint lithography (NIL) is a promising technique for the nanofabrication of electronic devices, biosensors, optical elements, and high-density magnetic storage devices; [1][2][3][4][5] it has the advantages of high throughput, simple processes, and efficiency. [6][7][8] The general principle of the NIL process is to press a nanopatterned mold on a resist-coated substrate for nanopattern transfer, which requires an NIL mold with an accurately designed nanopatterned surface, and sufficient mechanical strength.…”
Section: Introductionmentioning
confidence: 99%