1987
DOI: 10.1007/bf03156140
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Addition reactions of silyl radicals to unsaturated compounds

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Cited by 28 publications
(6 citation statements)
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“…The reaction of (TMS) 3 Ge • with diaryl ketones gave rise to EPR spectra of moderate intensity, indicative of steady-state concentrations of radical adducts lower than those observed when adding (TMS) 3 Si • or Et 3 Si • radicals to the same compounds. , The hyperfine splitting constants of these radicals are close to those reported for the related adducts of other germyl and silyl radicals and have been assigned on a similar basis …”
Section: Resultssupporting
confidence: 66%
“…The reaction of (TMS) 3 Ge • with diaryl ketones gave rise to EPR spectra of moderate intensity, indicative of steady-state concentrations of radical adducts lower than those observed when adding (TMS) 3 Si • or Et 3 Si • radicals to the same compounds. , The hyperfine splitting constants of these radicals are close to those reported for the related adducts of other germyl and silyl radicals and have been assigned on a similar basis …”
Section: Resultssupporting
confidence: 66%
“…As it will be shown later, E γ ′ centers surviving the warming at room temperature do not react with adsorbed polybutadiene. This lack of reactivity is at variance with the chemistry of Si radicals, which are known to be even more reactive toward oxygen and double bond addition than their C analogues. ,, A possible explanation is that the stable fraction of E′ γ centers is buried out of the reach of reactants within the bulk of the silica structure.…”
Section: Results and Discussionmentioning
confidence: 99%
“…The bond angles θ determined at the UHF/VTZP level are compared in Table with the values obtained from the C-2s character s in the SOMO estimated from the experimental 13 C α hfs constants, a C exp , of imidoyls Y−C(•)NBu t (Y = N(SiBu t 3 ) 2 , OSiMe 3 , OBu t , SiEt 3 , SBu t 3 , SCF 3 ) bearing alkyl groups instead of γ-hydrogens. Still now, ESR spectroscopists , assume that in localized radicals the contributions to the hfs constant at the radical center due to spin-polarization and spin-delocalization are negligible and determine the s-character by dividing simply the experimental hfs constant by the value ( A 0 ) computed for a unitary atomic s-population 1 setting in eq 3 the total spin population at the radical center (ρ C ) and the polarization contribution a C pol equal to unit and zero, respectively. In the present case the contribution due to spin-polarization has not been neglected in eq 4 because it can be approximated by the value (29.8 G) of a C exp in the Et 3 Si−C(•)NBu t radical since the direct contribution vanishes in a π-electron radical.…”
Section: Resultsmentioning
confidence: 99%