Addressing EUV patterning challenges towards the limits of NA 0.33 EUV exposure

Dauendorffer, Arnaud; Onitsuka, Tomoya; Tadatomo, Hiroki; Yoshida, Keisuke; Shiozawa, Takahiro; Genjima, Hisashi; Nagamine, Noriaki; Kamei, Yuya; Okada, Soichiro; Kawakami, Shinichiro; Muramatsu, Makoto; Shimura, Satoru; Nafus, Kathleen; Oikawa, Noriaki; Feurprier, Yannick; Demand, M.; Negreira, Ainhoa Romo; Nagahara, Seiji; Dinh, Congque; Ključar, Luka; Simone, Danilo De; Foubert, Philippe

doi:10.1117/12.2600860

Cited by 1 publication

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“…We have reported ESPERT TM process results in previous conferences. [5][6][7][8][9][10][11][12] MOR 28 nm pitch L/S patterning results were also discussed as shown in Figure 4. 7 The left graph in Figure 4 shows resist critical dimension (CD) after development with different EUV exposure dose.…”

Section: Rls Relationship Improvement By Espert Tmmentioning

confidence: 99%

“…The challenges of stochastics defects, resolution (R)-line edge roughness (L)-sensitivity (S) trade-off (RLS trade-off) relationship, and resist patterning in Figure 1 will be increasingly difficult as the pattern size shrinks. To address upcoming challenges, we are taking a holistic approach consisting in lithography and etching cooptimization to solve patterning challenges [5][6][7][8][9][10][11][12] as shown in Figure 2. In this paper, the most recent advances in EUV patterning using metal oxide resists (MOR) and chemically amplified resists (CAR) will be discussed.…”

Section: Introductionmentioning

confidence: 99%

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Recent advances in EUV patterning in preparation towards high-NA EUV

Nagahara

Dauendorffer

Thiam

et al. 2023

Advances in Patterning Materials and Processes XL

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High-NA EUV lithography is currently under development to keep up with device node scaling with smaller feature sizes. In this paper, the most recent advances in EUV patterning using metal oxide resists (MOR) and chemically amplified resists (CAR) are discussed. A newly developed resist development method (ESPERT™) was examined on MOR with 24 nm pitch line and space (L/S) patterns and 32 nm pitch pillars for preparation of high-NA EUV patterning. The patterning results showed improved sensitivity and pattern collapse margin. CAR contact hole patterning at 28 nm pitch was also examined by stochastic lithography simulation. The simulation results indicate that resist film thickness needs to be optimized for target pitches.

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