Adhesion and Cu Diffusion Barrier Properties of a MnO_x Barrier Layer Formed with Thermal MOCVD

Abstract

A thin and uniform manganese oxide layer was formed below 400 o C by thermal chemical vapor deposition (CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. No Cu delamination were observed both in the as-deposited and in the annealed PVD-Cu/CVD-MnO x /TEOS samples deposited below 300 o C, meanwhile the Cu films were delaminated from the CVD-MnO x /TEOS substrates deposited at 400 o C. From the results of XPS, Raman and SIMS analysis, a major reason for degradation of the adhesion properties is considered to be amount of carbon inclusion in the CVD Mn oxide layer.

Effects of Water Desorption from SiO2 Substrates on the Thickness of Manganese Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition

“…1,2) Among various possibilities mentioned in previous reports, CVD-MnO x thin films have been shown to be a good candidate for the diffusion barrier layer that may satisfy the requirement for future nodes. [3][4][5][6][7] We reported previously 5) that the presence of water vapor in reaction atmosphere has notable effects on the CVDgrown MnO x layer. For example, MnO x thickness increased from a few nm to several tens of nm by the intentional introduction of water vapor into a reaction chamber.…”