1988
DOI: 10.1163/156856188x00101
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Adhesion and interface investigation of polyimide on metals

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Cited by 95 publications
(30 citation statements)
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“…In fact, it is well known that adhesion strength in the peel test varies with the mechanical properties of the peeling layer 3,12,26,27) ; in particular, higher modulus gives higher peel strength. For aromatic polyimides, their mechanical properties are also known to vary with the history of precursor origins used in the film formation [28][29][30] .…”
Section: Adhesion Propertiesmentioning
confidence: 99%
See 1 more Smart Citation
“…In fact, it is well known that adhesion strength in the peel test varies with the mechanical properties of the peeling layer 3,12,26,27) ; in particular, higher modulus gives higher peel strength. For aromatic polyimides, their mechanical properties are also known to vary with the history of precursor origins used in the film formation [28][29][30] .…”
Section: Adhesion Propertiesmentioning
confidence: 99%
“…In particular, the polyimide exhibits a very poor adhesion to copper metal, so that the polyimide film is easily delaminated from the copper when it is overcoated on copper metal [6][7][8][9][10][11][12][13][14] . Furthermore, its poly(amic acid) precursor was found to react with copper metal during the imidization process, consequently generating copper oxide particles which diffuse into the polyimide film [12][13][14] . The diffusion of copper oxide particles is known to degrade the dielectric properties of the polyimide film 15) .…”
Section: Introductionmentioning
confidence: 99%
“…The reaction chamber was evacuated to approximately 0.13 Pa, and then argon gas was introduced into the reaction chamber at a pressure of 13.3 Pa. Afterward, the films were exposed to argon plasma (at an RF input power of 5-100 W) for 5-60 s. Immediately after the plasma exposure, the films were taken from the reaction chamber and exposed to air for [5][6][7][8][9][10] min at room temperature in order to be peroxidized.…”
Section: Formation Of Hydroperoxidementioning
confidence: 99%
“…Low bulk resistivity (Ն1.67 ⍀ cm) copper (Cu) and low dielectric coefficient (Յ2.8) fluorinated polyimide (PI) are, therefore, suitable choices for forming multilayered structures in these devices. At the Cu/PI interface, however, Cu tends to diffuse into the polyimide, causing leakage currents [1][2][3] and device degradation. Hence, several studies on potential barrier layers have been undertaken.…”
Section: Introductionmentioning
confidence: 99%
“…One approach involves metal barrier layers such as Ta, Ti, Al, Cr, Ni, W, or various alloys of these metals. [2][3][4][5] The second approach adopts organic materials as barrier layers, such as poly(arylene ether benzimidazole) (PAEBI) or others. 3,6,7 The third approach consists of O 2 and N 2 plasma pretreatment of the polyimide surface.…”
Section: Introductionmentioning
confidence: 99%