2016
DOI: 10.1016/j.tsf.2016.05.031
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Adhesion quality of evaporated aluminum layers on passivation layers for rear metallization of silicon solar cells

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Cited by 6 publications
(4 citation statements)
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“…Finally, 20 nm of Au was deposited on top of 2 nm of molybdenum (Mo). These metals were chosen due to their varying adhesion strengths from weak to strong, depending on the deposition technique and parameters 21–23 . Metals such as chromium and titanium, in combination with Au, showed no peeling and therefore were eliminated from further experimentations.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Finally, 20 nm of Au was deposited on top of 2 nm of molybdenum (Mo). These metals were chosen due to their varying adhesion strengths from weak to strong, depending on the deposition technique and parameters 21–23 . Metals such as chromium and titanium, in combination with Au, showed no peeling and therefore were eliminated from further experimentations.…”
Section: Resultsmentioning
confidence: 99%
“…These metals were chosen due to their varying adhesion strengths from weak to strong, depending on the deposition technique and parameters. [21][22][23] Metals such as chromium and titanium, in combination with Au, showed no peeling and therefore were eliminated from further experimentations. Al/Au, Ni/Au, and Mo/Au showed peeling but still had good adhesion to the silicon during the electroplating process (Figure 4A-C).…”
Section: Microstructures Adhesion To Siliconmentioning
confidence: 99%
“…Specifically, for the rear contact, we used a low-work-function metal to tune the work function. Considering the direct evaporation of the low-work-function metal might cause poor adhesion, we used an ultrathin metallic adhesion layer (Ag) along with the low-work-function metal (Mg) to improve the rear contact quality in organic/Si hybrid solar cells, inspired by the adhesion layer in passivated emitter rear cells (PERC) and surface plasmon resonance sensors. , Consequently, we succeeded to reduce the series resistance ( R S ), tune the work function, and form the Ohmic contact simultaneously. Moreover, for the front passivation, a low-cost surfactant along with PEDOT:PSS instead of a single layer was used to improve the passivation effect of Si, leading to an increased minority carrier lifetime from 138.81 to 252.89 μs.…”
Section: Introductionmentioning
confidence: 99%
“…A larger magnification of the micrograph at the interface is also shown in the inset. The observed interfacial abruptness and voids are likely attributed to the formation of H 2 bubbles by the interaction of Al with adsorbed H 2 O on the surface [22]. The typical thickness of the film and native aluminum oxide measured is around 80 and 5 nm, respectively.…”
mentioning
confidence: 85%