Adhesion studies of CVD copper metallization

Gandikota, Srinivas; Voss, Steve; Tao, Rong; Duboust, Alain; Cong, D.; Chen, Liang-Yuh; Ramaswami, Sesh; Carl, D.

doi:10.1016/s0167-9317(99)00326-3

Cited by 41 publications

(28 citation statements)

References 7 publications

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“…A thickness was used to enhance the adhesion of CVD copper film 15) on the TaN (350 A) barrier layer. The HCM copper interlayer is also known to increase the (111) texture of the grown CVD copper film.…”

Section: Methodsmentioning

confidence: 99%

“…Chen et al 22) reported that the Cu polishing rate was closely related to the film hardness. The microhardness measurements have been of interest in recent years, 9,15,23) but the effect of Cu CVD process conditions on the microhardness has not been investigated. Figure 10 shows the variation of the microhardness of the CVD Cu films on HCM Cu as a function of the substrate temperature.…”

Section: Deposition Characteristicsmentioning

confidence: 99%

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Metalorganic Chemical Vapor Deposition of Copper Using (Hexafluoroacetylacetonate)Cu^(I)(3,3-dimethyl-1-butene) with a Liquid Delivery System

Choi

Pyo²,

Lee³

et al. 2002

Jpn. J. Appl. Phys.

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From variable temperature (VT) 1 H-nuclear magnetic resonance (NMR) and a heating test, it was found that (hexafluoroacetylacetonate)Cu ðIÞ (3,3-dimethyl-1-butene) [(hfac)Cu ðIÞ (DMB)] was stable up to 65 C. The effects of various process conditions such as substrate temperature, liquid precursor flow rate and hydrogen carrier gas flow rate on the deposition rate, texture, microhardness, surface roughness and uniformity were studied using a direct liquid injection 200 mm metalorganic chemical vapor deposition (MOCVD) reactor with hollow-cathode magnetron (HCM) sputter-deposited Cu substrate on silicon wafer. The MOCVD Cu process with (hfac)Cu ðIÞ (DMB) showed good conformality, continuous film morphology and low resistivity at a substrate temperature of 190 C, vaporizer temperature of 55 C, total pressure of 2.5 Torr and precursor flow rate of 0.5 cm 3 /min. X-ray diffraction (XRD) analyses demonstrated a strong (111) texture of the copper film. The higher (111) peak intensity and the narrower width at half maximum were obtained when the source feed rate was low. Also the higher (111) peak intensity was observed at higher substrate temperature. At temperature below about 200 C, the microhardness was increased with increasing substrate temperature. In the high temperature regime (>200 C), the hardness was decreased.

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Section: Methodsmentioning

confidence: 99%

Section: Deposition Characteristicsmentioning

confidence: 99%

Metalorganic Chemical Vapor Deposition of Copper Using (Hexafluoroacetylacetonate)Cu^(I)(3,3-dimethyl-1-butene) with a Liquid Delivery System

Choi

Pyo²,

Lee³

et al. 2002

Jpn. J. Appl. Phys.

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“…Cu thin films fabricated using ALD techniques have poor interfacial adhesion to oxide dielectrics, such as SiO 2 , causing failure of the copper interconnect system. [26][27][28] To evaluate the interfacial adhesion of Cu-Al (4.6 at. %) alloy films and reference Cu-Mn (4.7 at.…”

Section: A131-3 Parkmentioning

confidence: 99%

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

Park

Han

Kang

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H2 plasma, while Al was deposited using trimethylaluminum as the precursor and H2 plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO2 dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects.

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“…Alternative copper seed deposition techniques such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) have been investigated in order to overcome this technological limit. Although copper CVD was demonstrated to yield efficient seeding, with conformal and ultra-thin films, the main limitations of this technique are its high cost and the weak adhesion between copper and the underlying barrier [3]. Copper ALD has not emerged yet as a possible solution, mainly due to the challenging conversion of the ALD-grown copper oxide into metallic copper [4].…”

Section: Introductionmentioning

confidence: 99%

Seedless Copper Electrochemical Deposition on PVD Resistive Substrates as a Replacement/Enhancement for PVD Cu Seed Layers in HAR TSVs

Armini¹,

Wilson²,

Moussa³

et al. 2010

ECS Trans.

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The results of a wet alkaline seed deposition process directly on barrier layers or thin adhesion promoter films, such as CVD Co are presented. This solution has been successfully used for copper plating on blanket and patterned Though Silicon Via (TSVs) wafers covered with either silicon oxide/PVD Ta(N)/CVD Co or silicon oxide/PVD Ti/CVD Co stacks. Such direct plated films were used as seed layers for subsequent copper plating from a conventional sulfuric acid electroplating bath. The effect of the plated stack composition and thicknesses, processing waveform and applied current on the plating rate and morphology of the deposited copper has been investigated.

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Adhesion studies of CVD copper metallization

Cited by 41 publications

References 7 publications

Metalorganic Chemical Vapor Deposition of Copper Using (Hexafluoroacetylacetonate)Cu^(I)(3,3-dimethyl-1-butene) with a Liquid Delivery System

Metalorganic Chemical Vapor Deposition of Copper Using (Hexafluoroacetylacetonate)Cu^(I)(3,3-dimethyl-1-butene) with a Liquid Delivery System

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

Seedless Copper Electrochemical Deposition on PVD Resistive Substrates as a Replacement/Enhancement for PVD Cu Seed Layers in HAR TSVs

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Adhesion studies of CVD copper metallization

Cited by 41 publications

References 7 publications

Metalorganic Chemical Vapor Deposition of Copper Using (Hexafluoroacetylacetonate)Cu(I)(3,3-dimethyl-1-butene) with a Liquid Delivery System

Metalorganic Chemical Vapor Deposition of Copper Using (Hexafluoroacetylacetonate)Cu(I)(3,3-dimethyl-1-butene) with a Liquid Delivery System

Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

Seedless Copper Electrochemical Deposition on PVD Resistive Substrates as a Replacement/Enhancement for PVD Cu Seed Layers in HAR TSVs

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Metalorganic Chemical Vapor Deposition of Copper Using (Hexafluoroacetylacetonate)Cu^(I)(3,3-dimethyl-1-butene) with a Liquid Delivery System

Metalorganic Chemical Vapor Deposition of Copper Using (Hexafluoroacetylacetonate)Cu^(I)(3,3-dimethyl-1-butene) with a Liquid Delivery System