Adiabatic and nonadiabatic nanofocusing of plasmons by tapered gap plasmon waveguides

Pile, David; Gramotnev, Dmitri K.

doi:10.1063/1.2236219

Cited by 148 publications

(98 citation statements)

References 27 publications

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“…The silicon is tapered down from a width of 400 nm in the photonic waveguide to a width of w 75…200 nm at the MSM junction. The tapered section has a length of 0.55 μm and converts the photonic mode to a plasmonic mode [27]. The silicon core of the detector is wider at its base than at its top as a consequence of the fabrication process.…”

Section: Operation Principlementioning

confidence: 99%

Silicon-plasmonic internal-photoemission detector for 40 Gbit/s data reception

Muehlbrandt

Melikyan

Harter

et al. 2016

Optica

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Silicon-plasmonics enables the fabrication of active photonic circuits in CMOS technology with unprecedented operation speed and integration density. Regarding applications in chip-level optical interconnects, fast and efficient plasmonic photodetectors with ultrasmall footprints are of special interest. A particularly promising approach to silicon-plasmonic photodetection is based on internal photoemission (IPE), which exploits intrinsic absorption in plasmonic waveguides at the metal-dielectric interface. However, while IPE plasmonic photodetectors have already been demonstrated, their performance is still far below that of conventional high-speed photodiodes. In this paper, we demonstrate a novel class of IPE devices with performance parameters comparable to those of state-of-the-art photodiodes while maintaining footprints below 1 μm 2 . The structures are based on asymmetric metal-semiconductormetal waveguides with a width of less than 75 nm. We measure record-high sensitivities of up to 0.12 A/W at a wavelength of 1550 nm. The detectors exhibit opto-electronic bandwidths of at least 40 GHz. We demonstrate reception of on-off keying data at rates of 40 Gbit/s.

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Section: Operation Principlementioning

confidence: 99%

Silicon-plasmonic internal-photoemission detector for 40 Gbit/s data reception

Muehlbrandt

Melikyan

Harter

et al. 2016

Optica

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“…Applying a voltage between the metal electrodes changes the refractive index of the electro-optic (EO) material in the slot due to the Pockels effect, and therefore influences the phase velocity of the plasmonic mode. The photonic mode of a silicon nanowire waveguide (blue) is converted to a gap surface plasmon polariton (SPP) via a tapered silicon waveguide enclosed by a tapered gap plasmon waveguide [23]. The inset shows a cross section of the device with the mode field of the SPP in the gap.…”

Section: Modulator Design and Fabricationmentioning

confidence: 99%

Plasmonic-organic hybrid (POH) modulators for OOK and BPSK signaling at 40 Gbit/s

et al. 2015

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Abstract:We report on high-speed plasmonic-organic hybrid MachZehnder modulators comprising ultra-compact phase shifters with lengths as small as 19 µm. Choosing an optimum phase shifter length of 29 µm, we demonstrate 40 Gbit/s on-off keying (OOK) modulation with direct detection and a BER < 6 × 10 −4 . Furthermore, we report on a 29 µm long binary-phase shift keying (BPSK) modulator and show that it operates error-free (BER < 1 × 10 −10 ) at data rates up to 40 Gbit/s and with an energy consumption of 70 fJ/bit. Huebner, C. Koos, J. Becker, W. Freude, and J. Leuthold, "Error vector magnitude as a performance measure for advanced modulation formats," IEEE Photon.

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“…Figure 1(a) gives an artist's impression of the POH PM. Mode conversion between the quasi-TE mode of the silicon waveguide and the gap surface plasmon polariton (SPP) is accomplished via a tapered silicon waveguide enclosed by a tapered gap plasmon waveguide [23]. The phase of the optical signal is modulated in the 29 µm long plasmonic PM section, labelled as "Phase Modulator (PM)" in Fig.…”

Section: Modulator Design and Fabricationmentioning

confidence: 99%