“…The Au layer thickness can be reduced during e-beam evaporation to ensure adequate thermal permeation across the film to induce complete de-wetting. 4 Alternatively, the deposition rate of SiO x can be lowered during PECVD by tuning down the precursor gas flows (N 2 , N 2 O, SiH 4 ), to allow for a smoother SiO x film. It is also recommended to carry out periodic cleaning of the PECVD chamber to avoid unwanted contamination of the SiO x film.…”