2020
DOI: 10.1039/d0na00567c
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Adjustable metal particle grid formed through upward directed solid-state dewetting using silicon nanowires

Abstract: Sub-micron sized metal particles were formed through the annealing of sputtered metal thin films on silicon nanowires (SiNWs). During high-temperature annealing, the cylindrical SiNW structures induce the solid-state dewetting behavior...

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Cited by 3 publications
(1 citation statement)
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“…The Au layer thickness can be reduced during e-beam evaporation to ensure adequate thermal permeation across the film to induce complete de-wetting. 4 Alternatively, the deposition rate of SiO x can be lowered during PECVD by tuning down the precursor gas flows (N 2 , N 2 O, SiH 4 ), to allow for a smoother SiO x film. It is also recommended to carry out periodic cleaning of the PECVD chamber to avoid unwanted contamination of the SiO x film.…”
Section: Troubleshootingmentioning
confidence: 99%
“…The Au layer thickness can be reduced during e-beam evaporation to ensure adequate thermal permeation across the film to induce complete de-wetting. 4 Alternatively, the deposition rate of SiO x can be lowered during PECVD by tuning down the precursor gas flows (N 2 , N 2 O, SiH 4 ), to allow for a smoother SiO x film. It is also recommended to carry out periodic cleaning of the PECVD chamber to avoid unwanted contamination of the SiO x film.…”
Section: Troubleshootingmentioning
confidence: 99%