Adjustable Switching Voltage Via Sol-Gel Derived and Ag In Situ Doped SiO₂ Thin Films for ReRAM

Abstract

The sol-gel derived technique has been proposed not only to tailor the microstructure of resistive layer but to control the amount of metal during device fabrication for resistive random access memory (ReRAM). Using the sol-gel derived technique can modulate the solution ratio to adjust the resistance and operation voltage. In addition, various metal concentrations can be doped in sol-gel derived resistive layer to significantly improve switching properties including switching speed and power consumption. Above all, forming energy and morphology of metal filament can be ordered by the sol-gel derived technique, which is desirable for practical ReRAM applications.

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

“…Various initiation sources such as furnace [ 219,223 ] or oven, [ 184,190,224 ] rapid thermal annealing (RTA), [ 131,140,202,204,225,226 ] microwave, [ 119,122,124,227 ] ultraviolet (UV) photochemical activation (lamp [ 118,174,198,228 ] and laser [ 229 ] ), and hotplate [ 98,185 ] have been used for the solution‐based metal oxides films’ conversion for RRAM devices. From these, the most common initiation sources are based on conventional thermal annealing (CTA), like furnace/oven and hotplate annealing.…”

“…Symmetric devices are composed by equal metals as bottom and top electrodes. These can be inert metals (e.g., Au, [ 232 ] TaN, [ 225 ] and Pt [ 118 ] ) or active and oxidizable metals (e.g., Al, [ 233 ] ITO, [ 104 ] Ni, [ 234 ] Ti, [ 72 ] Cu, [ 186 ] and Ag [ 64 ] ). Table 1 shows the reports of symmetric contacts S‐RRAMs.…”