Admittance of metal–insulator–semiconductor tunnel contacts in the presence of donor–acceptor mixed interface states and interface reaction

Chattopadhyay, Pabitra

doi:10.1063/1.1324692

Cited by 4 publications

(2 citation statements)

References 32 publications

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“…25,29,37,38 Although resulting expressions of the admittance are quite similar to Equation 12, the microscopic response times of localized interface states are quite different: a capture-emission time constant is derived from Shockley-Read-Hall parameters 22 in the former models, [37][38][39][40] in contrast with the tunnel response time (Eqn 7) in Gomila's model. 36 …”

Section: Kinetic Mechanismsmentioning

confidence: 94%

Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions

Godet

Fadjie-Djomkam

Ababou‐Girard

2013

Solid-State Electronics

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. Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions.. Solid-State Electronics, Elsevier, 2013, 80, pp.142-151 electronic mail: christian.godet@univ-rennes1.fr ********************************************************************************* and from the low-high frequency capacitance method valid for thick MIS devices; the low defect density near mid-gap ( < 10 11 eV -1 .cm -2 ) results from a good passivation of dangling bonds at the C 12 H 25 -n Si interface. In the high current density regime ( > 1 mA.cm -2 ), the admittance depends strongly on both the density of localized states and the dc current density, so that the excess capacitance method overestimates. For very high current densities (J > 10 mA.cm -2 ), the observation of a linear C(ω ≈ 0) vs (J) dependence could indicate some Fermi level pinning in a high interface density of states located near the Si conduction band. The temperature-independent excess capacitance C(ω ≈ 0) -C(1 MHz) observed at very small J, not predicted by the admittance model, is attributed to some dipolar relaxation in the molecular junction.3

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Section: Kinetic Mechanismsmentioning

confidence: 94%

Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions

Godet

Fadjie-Djomkam

Ababou‐Girard

2013

Solid-State Electronics

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“…In general, the separation of a metal and a dielectric material carrying opposite electrostatic charges induces the open-circuit voltage in a conventional TENG. Metal–insulating–semiconductor (MIS) TENGs are based on an electronic excitation process under nonequilibrium conditions, which cannot be explained by the electrostatic introduction theory. − Compared to the MS TENG, only an insulating layer is added between the metal and the semiconductor , which can generate tribotunneling current based on the quantum mechanical electron tunneling of the insulating layer. The current generation mechanism is as follows: First, triboelectric charge is generated at the metal–insulator surface .…”

Section: Metal–insulating–semiconductor Tengmentioning

confidence: 99%

Direct-Current Triboelectric Nanogenerators Based on Semiconductor Structure

Luo

Xiao

Zhang

et al. 2022

ACS Appl. Electron. Mater.

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With the rapid development of technology and the expansion of the information age, self-powered systems are gradually emerging. Triboelectric nanogenerators (TENGs), coupling contact electrification and electrostatic induction, can realize continuous power supplied for small devices by converting energy. Traditional TENGs mainly used organic polymer insulators as triboelectric materials, which are limited by low current density alternating current. Recently, many different semiconductor material systems, especially gallium nitride (GaN), have been tried for better electric output performance or more application potential due to their high current density direct current, which can improve the output performance and mechanical properties of TENGs and have important application value at the forefront of portable electronic devices, Internet of things, environmental and infrastructural monitoring, medical science, security, and other fields. In this review, we summarize the latest research achievements and progress on TENGs with different semiconductor structures, including metal–semiconductor TENGs, semiconductor–semiconductor TENGs, metal–insulator–semiconductor TENGs, and liquid–semiconductor TENGs. On the basis of the current TENG theory of tribovoltaic effect, the generation mechanism and performance of each TENG was represented. Direct-current TENGs based on semiconductor structure show great promise for self-powered electronic devices.

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Aging characteristics of nickel contact on p-type silicon

Chattopadhyay

2003

Journal of Applied Physics

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The effect of aging on the electrical properties of a Ni–p-Si contact was studied by measuring the electrical characteristics at different intervals of time. The current–voltage characteristics measured show a decrease in the current over time for the first few measurements at different aging times followed by an insignificant change for longer aging. The barrier height extracted from I−V characteristics was found to increase from an initial value to a final higher value after a prolonged period of aging. This is the opposite of those normally exhibited by an aging Al−SiO2−p-Si system [H. C. Card, IEEE Trans. Electron Devices ED-23, 538 (1976)]. Similar to the case of current, the device conductance and capacitance were also found to decrease with the aging time until they become saturated after longer periods of aging. The features of aging are explained by a theoretical model which considers the existence of an interfacial SiO2 layer and Si traps in the interfacial region. It is shown that the concentration of silicon traps decays exponentially over time. The interpretation of the aging characteristics of a Ni–p-Si contact on the basis of exponential decay in the silicon trap concentration is in contrast to an Al−SiO2−p-Si system where the aging behavior was accounted for in terms of the net growth in silicon concentration over time followed by saturation after longer aging. Analyses of the low and high frequency capacitance reveal two types of interface state that have different time constants and density. The time constants of these states were found to be dependent on the aging time via surface potential at the contact.

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Admittance of metal–insulator–semiconductor tunnel contacts in the presence of donor–acceptor mixed interface states and interface reaction

Cited by 4 publications

References 32 publications

Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions

Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions

Direct-Current Triboelectric Nanogenerators Based on Semiconductor Structure

Aging characteristics of nickel contact on p-type silicon

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