Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range

Войцеховский, А. В.; Nesmelov, S. N.; Dzyadukh, S. М.; Dvoretskii, S. A.; Михайлов, Н. Н.; Sidorov, G. Yu.; Yakushev, M. V.

doi:10.1134/s1063785021060286

Cited by 2 publications

(2 citation statements)

References 15 publications

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“…In particular, in [27][28][29][30] the study of the metal-dielectric-semiconductor structure based on MBE nBn n-HgCdTe by the method of admittance spectroscopy was carried out.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

et al. 2023

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This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). Seven different types of photosensitive structures for middle wavelength (MWIR) and long wavelength (LWIR) infrared (IR) radiation ranges grown by molecular beam epitaxy (MBE) have been studied by complex conductivity spectroscopy method. The current-voltage characteristics (CVC) were measured both in the dark and in the presence of illumination. Based on the measured dependences of the dark current density on temperature and the ratio of the perimeter to the area of the structure, the dominant contribution of the bulk current component compared to the surface component for the MWIR structure (x ~ 0.30) was established. This fact was confirmed by the value of the activation energy (from the Arrhenius plots) corresponding to the band gap. The results of frequency measurements of the differential conductivity of MIS structures based on NBνN also give a close activation energy, which corresponds to the diffusion limitation. LWIR structures (x ~ 0.20) are characterized by an increase in the contribution of the surface leakage current in the total dark current. In this case, the activation energy determined from MIS measurements exceeds the band gap of the ν-layer, which is associated with the presence of an energy barrier for holes in the valence band. It is shown that if the problem of passivation of mesa structures is solved, it is possible to fabricate efficient MWIR and LWIR nBn, NBνN detectors based on MBE HgCdTe with high threshold parameters.

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“…In particular, in [27][28][29][30] the study of the metal-dielectric-semiconductor structure based on MBE nBn n-HgCdTe by the method of admittance spectroscopy was carried out.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

et al. 2023

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“…However, such methods, first, often involve substrate heating in vacuum and, second, may lead to physical mixing and chemical interaction between the deposited material and MCT. The research into refinement of the existing CdHgTe passivation techniques and development and characterization of new ones still remains topical [10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Studying C-V characteristics of MIS structures with ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- on n- and p-CdHgTe stabilized with ultra-thin native oxide

et al. 2022

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Capacitance--voltage characteristics of metal dielectric semiconductor structures with atomic layer deposition Al2O3 on n- and p-Cd0.22Hg0.78Te (with and without a surface graded-gap layer) preliminary oxidized in oxygen glow discharge plasma (with the resulting oxide thickness of 2 nm) have been studied. The obtained structures reveal the positive fixed charge with a density of ~(1-6)·1011 cm-2. The ratio between a slow surface states density and a surface band gap width is almost independent on graded-gap layer presence, with the value of ~(4-8)·1011 cm-2·eV-1. The proposed passivation approach provides near-ideal low-frequency capacitance-voltages characterized by weak influence of fast surface states. Films of CdHgTe grown without the graded-gap surface layer are proved to be much more sensitive to the process of oxidation in glow discharge plasma. Keywords: mercury cadmium telluride, film, surface states, plasma.

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Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range

Cited by 2 publications

References 15 publications

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

Studying C-V characteristics of MIS structures with ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- on n- and p-CdHgTe stabilized with ultra-thin native oxide

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