Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator

Dzyadukh, S. М.; Войцеховский, А. В.; Nesmelov, S. N.; Sidorov, G. Yu.; Варавин, В. С.; Васильев, В. В.; Dvoretsky, S. A.; Михайлов, Н. Н.; Yakushev, M. V.

doi:10.1007/s11182-018-1294-9

Cited by 4 publications

(1 citation statement)

References 10 publications

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“…The structures with oxide formed in glow discharge plasma demonstrate slightly lower slow surface states density in comparison to the structures with oxide formed in remote RF-plasma. Wide hysteresis of C-V curves presented in known works [12][13][14][25][26][27] agrees with our conclusions on unsatisfactory passivation and stabilization abilities of native HgCdTe oxide, formed during storage in air, and anodic native oxide, formed in a liquid electrolyte. An interface between deposited Al 2 O 3 and non-oxidized HgCdTe has also poor electro-physical properties.…”

Section: Resultssupporting

confidence: 91%

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Zakirov¹,

Kesler²,

Sidorov³

et al. 2020

Semicond. Sci. Technol.

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Metal-insulator-semiconductor structures with atomic layer deposited (ALD) Al 2 O 3 and ultra-thin native oxide were formed on n-type variband Hg 1-x Cd x Te of two different volume compositions x, referred to as MWIR and LWIR. It is shown that presence of native oxide prior to plasma-enchanced ALD process and origination of this oxide are crucial to properties of an insulator-semiconductor interface. Ultra-thin native oxide formed in glow discharge or remote RF plasma is much more stable than oxide formed during storage of sample in air and provides significantly improved interface quality. The positive sign of fixed charge introduced by plasma oxide is more preferable for an n-type semiconductor than the negative one, but obtained density of fixed charge up to 1 × 10 12 cm −2 is still quite high and should be reduced. Density of slow surface states, being responsible for hysteresis of C-V characteristics, is much lower in case of plasma oxide, with C-V curves showing near-ideal high-frequency behavior.

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Section: Resultssupporting

confidence: 91%

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Zakirov¹,

Kesler²,

Sidorov³

et al. 2020

Semicond. Sci. Technol.

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Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer

2019

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Admittance of Pentacene- Based Mis-Structures with Two-Layer Insulator SiO2–Al2O3

Войцеховский¹,

Nesmelov²,

Dzyadukh³

et al. 2021

Russ Phys J

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Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator

Cited by 4 publications

References 10 publications

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer

Admittance of Pentacene- Based Mis-Structures with Two-Layer Insulator SiO2–Al2O3

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Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator

Cited by 4 publications

References 10 publications

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al2O3

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al2O3

Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer

Admittance of Pentacene- Based Mis-Structures with Two-Layer Insulator SiO2–Al2O3

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Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al₂O₃