Adsorption and Decomposition of H₂S on InP(100)

Abstract

The adsorption and thermal reaction of H 2 S on the InP(100) surface is studied by synchrotron radiation (SR) soft X-ray photoelectron spectroscopy. In addition to molecular adsorption, H 2 S decomposes to form the dissociative species of S, HS, and H on the surface at 100 K. The S atom of the sulfide species preferentially bonds to the In atom, and the H atom generated by the H 2 S dissociation bonds to the P atom. H 2 S molecules may physisorb on the surface in the form of an icelike multilayer/cluster at low temperatures, even at low coverages. The irradiation of SR white light can induce an alternative reaction of H 2 S with the InP surface to form a thicker sulfur layer than that obtained by thermal deposition. The resulting sulfur layer may provide chemical protection for the InP substrate from further reaction.

Internal Structure of InP/ZnS Nanocrystals Unraveled by High-Resolution Soft X-ray Photoelectron Spectroscopy

“…The In−S and S x −In−P 1− x states are thought to be formed via S and P anion exchange. Ion exchange generally plays an important role in nanomaterials, such as nanowires, − nanorods, and nanocrystals. − Indeed, S and P ion exchange has been reported to take place even at low temperature (∼60 °C) for a sulfur-passivated surface of bulk InP in the presence of a (NH 4 ) 2 S solution or H 2 S gas. ,,− …”

Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing

“…It is expected that the S preferentially reacts with In to form In-S at the interface during S passivation process, which suppressed the In diffusion and formation of InO. [17,18] Therefore, the In-S bonding is respectively. In Fig.…”

Probing Surface Chemistry at an Atomic Level: Decomposition of 1-Propanethiol on GaP(001) (2 × 4) Investigated by STM, XPS, and DFT

“…29 Low-temperature synchrotron photoemission spectroscopy studies also showed that the H atom of H 2 S or the alkanethiol molecule dissociates at 100−105 K to form S-metal bonds on InP and GaAs(001) surfaces. 7,10 On the basis of previous DFT studies, 38,39 there are two potential adsorption sites for the dissociated H atom; one site is on the 1P atom (H−1P bond) and the other is located on the edge Ga−Ga dimers (Ga−H−Ga bond). The location of the center of the bright protrusion in Figure 3a is consistent with the S atom when the propanethiolate adsorbate is bound to the edge Ga atom (3Ga or 4Ga in Figure 1d).…”

“…There are a few studies that have investigated the mechanisms for dissociative adsorption of H 2 S and short-chain alkanethiols − on III–V semiconductors using X-ray photoelectron spectroscopy (XPS) and temperature-programmed desorption, both of which measure the ensemble properties of the molecule. Real-space observations of the local structures have been limited to elemental sulfur-induced surface reconstructions .…”

“…A nucleophilic chalcogenide molecule favorably forms a Ga−chalcogenide bond after H dissociation on the Ga-rich GaP(001) (2 × 4) surface 29. Low-temperature synchrotron photoemission spectroscopy studies also showed that the H atom of H 2 S or the alkanethiol molecule dissociates at 100−105 K to form S-metal bonds on InP and GaAs(001) surfaces 7,10. On the basis of previous DFT studies,38,39 there are two potential adsorption sites for the dissociated H atom; one site is on the 1P atom (H−1P bond) and the other is located on the edge Ga−Ga dimers (Ga−H−Ga bond).…”