Adsorption and film growth of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi></mml:mrow><mml:mrow><mml:mn>60</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>on the GaAs(001) 2×6 surface by molecular-beam epitaxy

Xue, Qi‐Kun; Ogino, Toshio; Hasegawa, Yukio; Shinohara, Hisanori; Sakurai, Takeshi

doi:10.1103/physrevb.53.1985

Cited by 20 publications

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In fact, disorder in the positioning of the atoms in the bright chains, previously interpreted as As-As dimers, was observed already earlier. 13,14,33 STM images for the ͑4 ϫ 6͒ model with mixed Ga-As dimers simulated according to the scheme of Tersoff and Hamann 34 and using bias voltages V b = ± 3.0 V are shown in Figs. 3͑a͒ and 3͑b͒, respectively.…”

Section: A "4 ã 6… Structurementioning

confidence: 99%

Ga-richGaAs(001)surface fromab initiocalculations: Atomic structure of the(4×6)and
Seino
¹
,
Schmidt
²
,
Ohtake
³

2006
Phys. Rev. B
20
0
13
0
View full text Add to dashboard Cite

Total-energy calculations for a series of GaAs͑001͒͑4 ϫ 6͒ and ͑6 ϫ 6͒ surfaces are presented. For the Ga-rich limit, we confirm the GaAs͑001͒͑4 ϫ 6͒ surface model proposed by Ohtake et al. ͓Phys. Rev. Lett. 93, 266101 ͑2004͔͒. The calculations indicate that the bright chains along the ͓110͔ direction observed experimentally for ͑4 ϫ 6͒ and ͑6 ϫ 6͒ surfaces are derived from surface Ga-As heterodimers. The near energetic degeneracy of different arrangements of these mixed dimers explains naturally the disorder of bright chains. A long-range correlation between ͑6 ϫ 6͒ surface units proposed by Kocán et al. ͓Phys. Rev. B 70, 201303͑R͒ ͑2004͔͒ allows for fulfilling the electron counting rule and renders a surface based on ͑6 ϫ 6͒ units more favorable.

show abstract

Section: A "4 ã 6… Structurementioning

confidence: 99%

Ga-richGaAs(001)surface fromab initiocalculations: Atomic structure of the(4×6)and
Seino
¹
,
Schmidt
²
,
Ohtake
³

2006
Phys. Rev. B
20
0
13
0
View full text Add to dashboard Cite

show abstract

Gallium‐rich reconstructions on GaAs(001)

Pristovsek

Tsukamoto

Ohtake

et al. 2003

Physica Status Solidi (b)

View full text Add to dashboard Cite

Ga-rich reconstructions on GaAs(001) surfaces were prepared by annealing and Ga dosing of Molecular Beam Epitaxy grown samples and analyzed in-situ by Reflectance Anisotropy Spectroscopy and Reflection High-Energy Electron Diffraction. Annealing or dosing gallium above about 800 K invariably results in a (4 Â 2)/c(8 Â 2) reconstruction. Lowering the temperature or annealing below 800 K results in a (2 Â 6)/(3 Â 6) reconstruction. By dosing the (2 Â 6)/(3 Â 6) reconstruction with more than 0.2 monolayer of gallium, it transforms into a (4 Â 6) reconstruction. The observed translational symmetries and measured RAS spectra are compared with results of first-principles calculations. None of the (2 Â 6) structures proposed in the literature is energetically stable. The RAS spectrum calculated for the z(4 Â 2) model resembles reasonably the data measured for the (4 Â 2) surface. The RAS spectra calculated for (2 Â 6) symmetries indicate that mixed Ga-As dimers likely are a structural element of the corresponding surface reconstructions.

show abstract

Investigation of Organic Supramolecules by Scanning Probe Microscopy in Ultra-High Vacuum

Nony¹,

Gnecco

Meyer

2006

Applied Scanning Probe Methods III

View full text Add to dashboard Cite

Adsorption and film growth ofC60on the GaAs(001) 2×6 surface by molecular-beam epitaxy

Cited by 20 publications

References 11 publications

Ga-richGaAs(001)surface fromab initiocalculations: Atomic structure of the(4×6)and
Seino
¹
,
Schmidt
²
,
Ohtake
³

2006
Phys. Rev. B
20
0
13
0
View full text Add to dashboard Cite

Ga-richGaAs(001)surface fromab initiocalculations: Atomic structure of the(4×6)and
Seino
¹
,
Schmidt
²
,
Ohtake
³

2006
Phys. Rev. B
20
0
13
0
View full text Add to dashboard Cite

Gallium‐rich reconstructions on GaAs(001)

Investigation of Organic Supramolecules by Scanning Probe Microscopy in Ultra-High Vacuum

Contact Info

Product

Resources

About

Adsorption and film growth ofC60on the GaAs(001) 2×6 surface by molecular-beam epitaxy

Cited by 20 publications

References 11 publications

Ga-richGaAs(001)surface fromab initiocalculations: Atomic structure of the(4×6)andSeino1, Schmidt2, Ohtake3 2006Phys. Rev. B200130View full textAdd to dashboardCite

Ga-richGaAs(001)surface fromab initiocalculations: Atomic structure of the(4×6)andSeino1, Schmidt2, Ohtake3 2006Phys. Rev. B200130View full textAdd to dashboardCite

Gallium‐rich reconstructions on GaAs(001)

Investigation of Organic Supramolecules by Scanning Probe Microscopy in Ultra-High Vacuum

Contact Info

Product

Resources

About

Ga-richGaAs(001)surface fromab initiocalculations: Atomic structure of the(4×6)and
Seino
¹
,
Schmidt
²
,
Ohtake
³

2006
Phys. Rev. B
20
0
13
0
View full text Add to dashboard Cite

Ga-richGaAs(001)surface fromab initiocalculations: Atomic structure of the(4×6)and
Seino
¹
,
Schmidt
²
,
Ohtake
³

2006
Phys. Rev. B
20
0
13
0
View full text Add to dashboard Cite