1991
DOI: 10.1016/0038-1098(91)90340-2
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Adsorption of atomic and molecular oxygen on Si(0 0 1)2 × 1: Coverage dependence of the Auger O K V V lineshape

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Cited by 6 publications
(6 citation statements)
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“…This concept of Weissmann seemed to work well on several bulk oxides and carbides [5-71. Stimulated by these results we were interested in the behaviour of cx in the initial adsorption stage of oxygen on clean low Miller index surfaces of Si, as large changes in charge transfer in the Si-0 bond may be expected to take place in this region [S-11]. Very recently [12], we reported a significant variation of Q! in the submonolayer region upon exposing the clean Si(OO1)2 x 1 surface to 0, and N,O.…”
Section: Introductionmentioning
confidence: 99%
“…This concept of Weissmann seemed to work well on several bulk oxides and carbides [5-71. Stimulated by these results we were interested in the behaviour of cx in the initial adsorption stage of oxygen on clean low Miller index surfaces of Si, as large changes in charge transfer in the Si-0 bond may be expected to take place in this region [S-11]. Very recently [12], we reported a significant variation of Q! in the submonolayer region upon exposing the clean Si(OO1)2 x 1 surface to 0, and N,O.…”
Section: Introductionmentioning
confidence: 99%
“…The 0 KVV Auger intensity ratio (Y introduced by Weissmann [41] was found to depend on the oxygen coverage at the Si(OO1) surface [50]. We have tried to relate the variation in a to a gradually changing bridge position of the oxygen atom as suggested earlier by HREELS measurements [52].…”
Section: Resultsmentioning
confidence: 99%
“…In ref. [50] we already outlined that the behaviour of (Y cannot be explained by the charge transfer concept [41] as this would yield a total charge transfer of at least two electrons which is physically unlikely. The presumption that the variation in (Y can be ascribed to changes in adsorption geometry of the adsorbed oxygen surface species is based on high-resolution electron energy loss spectroscopy To investigate the effect of the adsorption geometry on CY we have performed a set of MNDO calculations using a Si,H ,*O cluster.…”
Section: Oxygen On Siliconmentioning
confidence: 99%
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