2012
DOI: 10.1016/j.apsusc.2012.07.145
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Adsorption of atomic oxygen on HfC and TaC (110) surface from first principles

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Cited by 13 publications
(4 citation statements)
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“…[34][35][36][37][38] The stability of the three low-index Miller surfaces has been studied in detail for HfC, 39 which is consistent with previous theoretical studies for the HfC surfaces 40,41 that the (001) surface is the most stable one. These calculations have provided a large number of insights and helped to answer the long standing questions about the interpretation of experimental measurements.…”
Section: The Models and Calculation Detailssupporting
confidence: 71%
“…[34][35][36][37][38] The stability of the three low-index Miller surfaces has been studied in detail for HfC, 39 which is consistent with previous theoretical studies for the HfC surfaces 40,41 that the (001) surface is the most stable one. These calculations have provided a large number of insights and helped to answer the long standing questions about the interpretation of experimental measurements.…”
Section: The Models and Calculation Detailssupporting
confidence: 71%
“…Moreover, studies by Hunt et al 58 show that small alloying quantities of Ta-C can improve the oxidation resistance of platinum like carbides (WC) due to the fast creation of small and easily overcome passivation layers. Additionally, the theoretical studies of Liu et al 59 suggested that the formation of C−O bonds, crucial for the oxidation of the material, is much higher for Hf-C than for Ta-C. Therefore, it is sensible to assume that a cooperative catalytic process between ORR and HER is taking place on the 70 Ta-C-30 Hf-C solid solution.…”
Section: Discussionmentioning
confidence: 99%
“…Clearly, it could be observed that the change in DOS distribution near the Fermi level for both the pristine GH substrate (Figure 8a) and the adsorption configuration (Figure 8b) was not significant. These results suggested that the adsorption process of formaldehyde molecules did not markedly affect the electronic structure and distribution of the configuration, indicating a physical adsorption mechanism [58].…”
Section: Electronic Properties During the Adsorption Processmentioning
confidence: 85%