Adsorption of cesium atoms at structural defects on sapphire surfaces

Bonch-Bruevich, A. M.; Vartanyan, T. A.; Maksimov, Yu. N.; Przhibel’skiĭ, S. G.; Khromov, V. V.

doi:10.1134/1.558308

Cited by 8 publications

(7 citation statements)

References 4 publications

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“…Notice, however, that such a model of multiple interfaces is limited because adsorption on ionic surfaces, as for instance, sapphire, does not occur uniformly on the surface [26,27]. Those surfaces usually exhibit terraces along which the atoms tend to adsorb, forming lines.…”

Section: Discussionmentioning

confidence: 99%

Selective reflection technique as a probe to monitor the growth of metallic thin film on dielectric surfaces

et al. 2013

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Controlling thin film formation is technologically challenging. The knowledge of physical properties of the film and of the atoms in the surface vicinity can help improve control over the film growth. We investigate the use of the well-established selective reflection technique to probe the thin film during its growth, simultaneously monitoring the film thickness, the atom-surface van der Waals interaction and the vapor properties in the surface vicinity.

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Section: Discussionmentioning

confidence: 99%

Selective reflection technique as a probe to monitor the growth of metallic thin film on dielectric surfaces

et al. 2013

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“…This system has been thoroughly studied previously (Bonch-Bruevich et al, 1985, 1990, 1997. The advantages of this system are the chemical inertness of sapphire and its transparency in a wide spectral range, covering the entire visible and near-IR regions, in which the adsorbed cesium atoms exhibit strong optical absorption.…”

Section: Case Study: Cesium On Sapphirementioning

confidence: 99%

“…Variations of the surface density of the adsorbed atoms induced by high-power radiation were detected by measuring the transmission of a relatively weak probe light of a cw semiconductor laser. Using the value of the absorption cross section of the adsorbed atom (Bonch-Bruevich et al, 1985, 1997) =3×10 -16 cm 2 , we find that the absorption in the adsorbed layer makes up n 0 =3×10 -3 of the total intensity of the light passing through the layer. Thus, absorption of this kind can be reliably measured using low-noise high-intensity semiconductor lasers.…”

Section: Case Study: Cesium On Sapphirementioning

confidence: 99%

“…According to (Bonch-Bruevich et al, 1985, 1997, it is as low as 10 −5 . This allowed us to hope that the main mechanism for light-induced changes in the surface density of the atoms would be the photoinduced diffusion rather than photodesorption.…”

Section: Case Study: Cesium On Sapphirementioning

confidence: 99%

“…The experiments were performed under conditions of dynamic equilibrium between the volume phase and the phase adsorbed on the surface. According to (Bonch-Bruevich et al, 1985, 1997 the energy of adsorption of the atoms on the sapphire surface is 0.6 eV, which provides, at room temperature, a surface density of the adsorbed atoms n 0 = 10 13 cm -2 . Thus, the surface density of the adsorbed atoms appears to be fairly high, though still much lower than a monolayer.…”

Section: Case Study: Cesium On Sapphirementioning

confidence: 99%

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Coverage threshold for laser-induced lithography

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Recent experimental observations of laser-induced adsorption at the interface between an alkali vapor and a dielectric surface have demonstrated the possibility of growing metallic films of nanometric thickness on dielectric surfaces, with arbitrary shapes determined by the intensity profile of the light. The mechanisms directly responsible for the accumulation of atoms at the irradiated surface have been shown to involve photo-ionization of atoms very close to the surface. However, the existence of a vapor-pressure threshold for initiating the film growth still raises questions on the processes occurring at the surface. In this letter, we report on the observation that the vapor-pressure threshold corresponds to a minimum adatom coverage necessary for the surface to effectively neutralize the incoming ions and make possible the growth of a multilayer film. We discuss the hypothesis that the coverage threshold is a surface conductivity threshold.

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Adsorption of cesium atoms at structural defects on sapphire surfaces

Cited by 8 publications

References 4 publications

Selective reflection technique as a probe to monitor the growth of metallic thin film on dielectric surfaces

Selective reflection technique as a probe to monitor the growth of metallic thin film on dielectric surfaces

Light-Induced Surface Diffusion

Coverage threshold for laser-induced lithography

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