Adsorption of Gases on a Silicon Surface

Law, J. T.; Francois, E. E.

doi:10.1021/j150537a025

Cited by 32 publications

(7 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The quality factor at the resonant frequency was estimated to be about 1495.5 from the half bandwidth of 3 dB at the peak, which was smaller than the one measured in the pressure-control chamber of figure 9. The small value of the quality factor is caused by the degassing from the SOI and glass substrates [30,31], the O 2 gas generation in the second anodic bonding step [12,32] (expressed as the following chemical reaction) and the effect of the small gap at the bumps on the pumping speed.…”

Section: Performance Of Accelerometer and Gyroscope After Wlpmentioning

confidence: 99%

Development of wafer-level-packaging technology for simultaneous sealing of accelerometer and gyroscope under different pressures

Aono

Suzuki

Kanamaru

et al. 2016

J. Micromech. Microeng.

View full text Add to dashboard Cite

This research demonstrates a newly developed anodic bonding-based wafer-level-packaging technique to simultaneously seal an accelerometer in the atmosphere and a gyroscope in a vacuum with a glass cap for micro-electromechanical systems sensors. It is necessary for the accelerometer, with a damping oscillator, to be sealed in the atmosphere to achieve a high-speed response. As the gyroscope can achieve high sensitivity with a large displacement at the resonant frequency without air-damping, the gyroscope must be sealed in a vacuum. The technique consists of three processing steps: the first bonding step in the atmosphere for the accelerometer, the pressure control step and the second bonding step in a vacuum for the gyroscope. The process conditions were experimentally determined to achieve higher shear strength at the interface of the packaging. The packaging performance of the accelerometer and gyroscope after wafer-level packaging was also investigated using a laser Doppler velocimeter at room temperature. The amplitude at the resonant frequency of the accelerometer was reduced by air damping, and the quality factor of the gyroscope showed a value higher than 1000. The reliability of the gyroscope was also confirmed by a thermal cyclic test and an endurance test at high humidity and high temperature.

show abstract

Section: Performance Of Accelerometer and Gyroscope After Wlpmentioning

confidence: 99%

Development of wafer-level-packaging technology for simultaneous sealing of accelerometer and gyroscope under different pressures

Aono

Suzuki

Kanamaru

et al. 2016

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…We assign the high carbon and oxygen signals to atmospheric carbon oxide, oxygen, and water molecules penetrating the D/H interface. The absorption of the latter molecules on silicon surfaces at ambient temperatures is known; [ 18 ] a rapid increase of carbon and oxygen SIMS signals upon exposure to atmosphere was found for porous silicon. [ 19 ] Note that both oxygen and carbon signals in Figure 1d show reduced values in the range of the a‐Si:D layer, that is, carbon and oxygen do not diffuse to the D/H interface passing through the bulk a‐Si:D film.…”

Section: Resultsmentioning

confidence: 99%

“…In Figure 1, a series of SIMS depth profiles along with transmitted light images is shown for different laser annealing states of sample L24. Figure 1a-d shows profiles of 1 H (hydrogen), 2 H (hydrogen-2, termed deuterium (D) throughout the article), C (carbon), 18 O (oxygen) as well as silicon. In the as-deposited state (Figure 1a), the a-Si:D layer on top of the a-Si:H layer shows a well-defined interface with a steeply decreasing deuterium ( 2 H) concentration at increasing sputtering time.…”

Section: Stack Disintegration Effectsmentioning

confidence: 99%

Secondary Ion Mass Spectrometry Study of Hydrogenated Amorphous Silicon Layer Disintegration upon Rapid (Laser) Annealing

Beyer

Nuys

Andrä

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

We regret to inform our readers that Dr. Wolfhard Beyer has passed away during the review process of this publication. IntroductionHydrogenated amorphous silicon (a-Si:H) films are widely used and are of interest for various technologies like thin film solar cells, [1][2][3] silicon heterojunction solar cells, [4][5][6] thin film silicon solar cells on glass, [7][8][9] as well as transistors in large area displays. [10] Hydrogen plays a crucial role in these devices as it passivates silicon defects. Of particular, importance can be the motion of hydrogen during deposition at elevated temperatures and upon heat treatment. In recent time, interest has increased in details and mechanisms of a-Si:H film disintegration and peeling. [8,[11][12][13] These latter effects are known to occur mostly during annealing, in particular involving rapid heating. Related to such disintegration effects may be bubble and pinhole formation due to accumulation of H at interfaces. [14][15][16] The detachment of H containing silicon alloys and layer stacks upon thermal treatment is crucially problematic for the previously mentioned applications. Hence, it is important to understand the mechanisms of hydrogen motion to avoid the destruction of the films.In this article, we study by SIMS depth profiling the disintegration of deuterated and hydrogenated (a-Si:D/a-Si:H) layer structures after annealing by using a continuous wave (CW)

show abstract

“…While hydrogenation of silicon surfaces toward various ends had been explored since the 1930s, − it was examined with STM in 1988 by Wiesendanger et al, who recorded topographic constant-current images of phosphorus-doped hydrogenated amorphous silicon films . Subsequently, STM was further applied to hydrogenated Si(111) , and Si(100) surfaces − with most attention given to the hydrogen terminated 2×1 surface. ,, Unlike the clean surface, in which silicon dimer bistable buckling can occur, the hydrogen terminated surface has a symmetric dimer structure (Figure ).…”

Section: Silicon Surfaces and Imagingmentioning

confidence: 99%

Atomically Precise Manufacturing of Silicon Electronics

Pitters,

Croshaw,

Achal

et al. 2024

ACS Nano

View full text Add to dashboard Cite

Atomically precise manufacturing (APM) is a key technique that involves the direct control of atoms in order to manufacture products or components of products. It has been developed most successfully using scanning probe methods and has received particular attention for developing atom scale electronics with a focus on silicon-based systems. This review captures the development of silicon atom-based electronics and is divided into several sections that will cover characterization and atom manipulation of silicon surfaces with scanning tunneling microscopy and atomic force microscopy, development of silicon dangling bonds as atomic quantum dots, creation of atom scale devices, and the wiring and packaging of those circuits. The review will also cover the advance of silicon dangling bond logic design and the progress of silicon quantum atomic designer (SiQAD) simulators. Finally, an outlook of APM and silicon atom electronics will be provided.

show abstract

Adsorption of Gases on a Silicon Surface

Cited by 32 publications

References 0 publications

Development of wafer-level-packaging technology for simultaneous sealing of accelerometer and gyroscope under different pressures

Development of wafer-level-packaging technology for simultaneous sealing of accelerometer and gyroscope under different pressures

Secondary Ion Mass Spectrometry Study of Hydrogenated Amorphous Silicon Layer Disintegration upon Rapid (Laser) Annealing

Atomically Precise Manufacturing of Silicon Electronics

Contact Info

Product

Resources

About