2020
DOI: 10.1007/s11224-020-01578-w
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Adsorption of H2 molecules on B/N-doped defected graphene sheets—a DFT study

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Cited by 9 publications
(5 citation statements)
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“…Embedding vacancies-dopants in the graphene structure is another strategy to improve the reactivity of graphene for hydrogen storage. Various doped graphene structures with vacancies have been examined [ 68 , 69 , 93 , 119 , 125 , 143 , 146 , 147 , 148 , 149 , 150 , 151 , 152 , 153 , 154 , 155 , 156 ]. For instance, graphene with SW defects and doped with Li was investigated using a PBE functional with dispersion corrections [ 68 ].…”
Section: Hydrogen Storage On Graphene With Vacancy-dopingmentioning
confidence: 99%
“…Embedding vacancies-dopants in the graphene structure is another strategy to improve the reactivity of graphene for hydrogen storage. Various doped graphene structures with vacancies have been examined [ 68 , 69 , 93 , 119 , 125 , 143 , 146 , 147 , 148 , 149 , 150 , 151 , 152 , 153 , 154 , 155 , 156 ]. For instance, graphene with SW defects and doped with Li was investigated using a PBE functional with dispersion corrections [ 68 ].…”
Section: Hydrogen Storage On Graphene With Vacancy-dopingmentioning
confidence: 99%
“…Akilan et al have studied by DFT the adsorption of H 2 molecules on B/N-doped defected (5-8-5, 55-77, 555-777 and 5555-6-7777 defects) graphene sheets [48]. The Natom addition (donor behavior, n-type semiconductor) increases the delocalized electrons, while the B atoms (acceptor, p-type semiconductor) increase the localized electrons in the considered system.…”
Section: Mechanistic Insight and Kinetics Of H 2 Support Interactionmentioning
confidence: 99%
“…The Natom addition (donor behavior, n-type semiconductor) increases the delocalized electrons, while the B atoms (acceptor, p-type semiconductor) increase the localized electrons in the considered system. The most efficient adsorption was modelled when the H 2 molecule approached the sheet in a perpendicular direction (−80 meV), while the least efficient interaction was observed in a parallel orientation (−9 meV), while the delocalized electron density was higher on the fusion points of the pentagonal and hexagonal rings and would therefore enhance H 2 adsorption [48]. Another supporting DFT study of H 2 storage on TM-doped defected graphene (TM = transition metal) revealed that in the case of TM = Sc, the 555-777/Sc structure doped with Sc showed the maximum H 2 capacity, with H 2 binding energies in the range 0.2-0.4 eV/H 2 [49].…”
Section: Mechanistic Insight and Kinetics Of H 2 Support Interactionmentioning
confidence: 99%
“…Furthermore, the N-doped sheets behave as a donor (n-type semiconductor) and B-doped sheets behave as acceptors (p-type semiconductors). (60) The addition of N atom in the sheets increases the number of delocalized electrons and the addition of B atoms increases the number of localized electrons in the system. Therefore, B-and N-doped graphene have received extensive attention.…”
Section: Nonmetallic Dopingmentioning
confidence: 99%
“…Recently, researchers have shown that the metal-free dual doping of, for example, B, N, P, O, and S can synergistically and considerably affect the reactive sites because of the changes in charge redistribution in doped graphene. (60,(63)(64)(65) Importantly, the catalytic activity of N, O-codoped graphene for achieving high-efficiency hydrazine oxidation has been demonstrated experimentally and double doping with P and N can markedly increase chemical adsorption capacity. (66)(67)(68) Table 1 Adsorption energies, amounts of charge transfer, and total magnetic moments for 13 gases.…”
Section: Nonmetallic Dopingmentioning
confidence: 99%