In present paper, the structural, optical and electronic characteristics of PVP/PEO blend doped with silicon carbide and titanium oxide are studied for various optoelectronic applications like sensors, transistors, solar cell, photocatalysts and photovoltaic cell. Results show that absorption of blend increases about 78.3% and 77% when ratios rise in SiC and TiO 2 to 4.5 wt.% at 400 nm. The energy band gap of blend decreases from 3.6 eV to 3.3 eV and 3.31 eV when the contents of SiC and TiO 2 nanoparticles reach to 4.5 wt.%. The results concerning the electronic characteristics indicated to the excellent values of electronics parameters with the increase in SiC and TiO 2 contents. Finally, the obtained results concerning the PVP/PEO/SiC and PVP/PEO/TiO 2 nanocomposites have good structural, optical and electronic characteristics, which can be suitable for photonics and electronics fields with low cost, lightweight and flexibility.