Advance Process Control solutions for semiconductor manufacturing

Abstract

Traditional semiconductor manufacturing relies on a fixed process-recipe combined with a classical statistical process control that is used to monitor the production process. Leading-edge manufacturing processes require higher levels of precision and accuracy, which necessitate the use of tighter process control. Advanced Process Control (APC) is becoming a critical component to improve performance, yield, throughput, and flexibility of the manufacturing process using run-to-run, wafer-to-wafer, within wafer and real-time process control. The complexity of device manufacturing process as well as the strong coupling effect of several input parameters on the final process outputs prohibit the use of a classical single variable feedback control method. Therefore, multivariate, model-based APC system is developed in conjunction with feed-forward and feedback mechanisms to automatically determine the optimal recipe for each wafer based on both incoming wafer and tool state properties. The APC system uses wafer metrology, process models and sophisticated control algorithms to provide dynamic fine-tuning of intermediate process targets that enhance final device targets. The design of the APC system enables scalable control solutions across a single chamber, a process tool, multi-tools, a process module and multi-process modules using similar building blocks, concepts and algorithms.

Artificial Immune System for Fault Detection and Classification of Semiconductor Equipment

“…Traditional semiconductor manufacturing relied on statistical process controls used to monitor the production process. As the process became more complex and refined, process control with finer precision and accuracy was required and APC was proposed [20,21]. APC enables real-time process monitoring and control using sensors to instantly identify and control the critical process shifts [21].…”

Advanced simulation technology for etching process design for CMOS device applications

“…This control system based on advanced simulations is flexible and can extend conventional advanced process control (APC) systems with EES=FDC. [129][130][131][132][133] This system would greatly improve our ability to predict and control fluctuations in etching properties such as ΔCD and Δd R during mass production and allow us to realize high performance semiconductor devices with high yields in the future. However, a simulation technology for the plasma etching process itself would also be necessary to develop and improve models for VUV damage, Si defect diffusion, impurity deactivation by Si defects, annealing recovery effects, and IEDF=IADF when affected by the chamber component configuration.…”

Statistical MOSFET Parameter Extraction with Parameter Selection for Minimal Point Measurement

“…This includes statistical design methods [1,2,3], as well as the monitoring and control of the fabrication process itself, e.g. tuning the process to optimize yield; and detecting shifts and changes in the process that might adversely affect production [4,5]. There has been a substantial body of research dedicated to finding the most appropriate way to represent the statistical profile of the process in a way that can be used to facilitate subsequent prediction techniques.…”